|
|
Número de pieza | SIA912DJ | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SIA912DJ (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! New Product
Dual N-Channel 12-V (D-S) MOSFET
SiA912DJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.040 at VGS = 4.5 V
12 0.048 at VGS = 2.5 V
0.063 at VGS = 1.8 V
PowerPAK SC-70-6 Dual
ID (A)a
4.5
4.5
4.5
Qg (Typ.)
4.5 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhaced PowerPAK®
SC-70 Package
- Small Footprint Area
APPLICATIONS
• Load Switch for Portable Applications
RoHS
COMPLIANT
1
S1
2
G1
D1
3
D2
D1
6
D2
G2
5
2.05 mm S2
4
2.05 mm
Marking Code
Part # code
CAX
XXX
Lot Traceability
and Date code
Ordering Information: SiA912DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
12
±8
4.5a
4.5a
4.5a, b, c
4.5a, b, c
20
4.5a
1.6b, c
6.5
5
1.9b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
52
12.5
65 °C/W
16
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 74953
S-80436-Rev. B, 03-Mar-08
www.vishay.com
1
1 page New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
14 8
12
6
10
8
6
Package Limited
4
2
4
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
SiA912DJ
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74953
S-80436-Rev. B, 03-Mar-08
www.vishay.com
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SIA912DJ.PDF ] |
Número de pieza | Descripción | Fabricantes |
SIA912DJ | MOSFET ( Transistor ) | Vishay |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |