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PDF SIA918EDJ Data sheet ( Hoja de datos )
| Número de pieza | SIA918EDJ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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SiA918EDJ
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () MAX.
0.058 at VGS = 4.5 V
0.065 at VGS = 2.5 V
0.077 at VGS = 1.8 V
ID (A)
4.5 a
4.5 a
4.5 a
Qg (TYP.)
3.6 nC
PowerPAK® SC-70-6L Dual
D1
G2 6
S2 5
4
D2
D1
1 2.05 mm
Top View
2
3 G1
D2
Bottom View
1
S1
Marking Code: CL
Ordering Information:
SiA918EDJ-T1-GE3 (lead (Pb)-free and halogen free)
FEATURES
• TrenchFET® power MOSFET
• Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
• Typical ESD protection: 1000 V (HBM)
• 100 % Rg tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Portable devices such as smart phones, tablet PCs and
mobile computing
- Load switch
- DC/DC converter
- Power management
D1 D2
G1 G2
N-Channel MOSFET S1 N-Channel MOSFET S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d,e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
30
±8
4.5 a
4.5 a
4.4 b, c
3.5 b, c
15
4.5 a
1.6 b, c
7.8
5
1.9 b, c
1.2 b, c
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
52
12.5
65
°C/W
16
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state condition is 110 °C/W.
S16-1004-Rev. A, 30-May-16
1
Document Number: 79034
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiA918EDJ
Vishay Siliconix
Axis Title
100
Limited by RDS(on) (1)
IDM limited
10000
10
1000
100 μs
1
1 ms
0.1
TA = 25 °C
Single pulse
0.01
0.1
1
BVDSS limited
10
10 ms
100 ms
1s
10 s
DC
100
10
100
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Axis Title
10 10000
8
8
6
Package limited
4
2
1000
100
6
4
2
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
0
25
50 75 100 125
TC - Case Temperature (°C)
150
Current Derating a
Power Derating
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1004-Rev. A, 30-May-16
5
Document Number: 79034
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SIA918EDJ.PDF ] | |
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