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PDF SIA477EDJT Data sheet ( Hoja de datos )
| Número de pieza | SIA477EDJT | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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SiA477EDJT
Vishay Siliconix
P-Channel 12 V (D-S) MOSFET
Thin PowerPAK® SC-70-6L Single
D
D6
S5
4
0.6 mm
1 2.05 mm
Top View
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = -4,5 V
RDS(on) max. () at VGS = -3.7 V
RDS(on) max. () at VGS = -2.5 V
RDS(on) max. () at VGS = -1.8 V
Qg typ. (nC)
ID (A)
Configuration
S
72
3D
G
Bottom View
1
D
-12
0.0130
0.0145
0.0190
0.0320
33
-12
Single
FEATURES
• TrenchFET® Gen III p-channel power MOSFET
• Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
• 100 % Rg tested
• RDS(on) rating at VGS = -1.8 V
• Built in ESD protection with Zener diode
• Typical ESD performance: 3500 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Smart phones, tablet PCs, mobile
computing
- Battery switch
- Charger switch
- Load switch
G
S
P-Channel MOSFET
D
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Thin PowerPAK SC-70-6L
SiA477EDJT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
-12
±8
-12 a
-12 a
-12 a, b, c
-11 b, c
-50
-12 a
-2.9 b, c
19
12
3.5 b, c
2.2 b, c
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t5s
Steady state
RthJA
RthJC
28
5.3
36
°C/W
6.5
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S16-1724-Rev. A, 29-Aug-16
1
Document Number: 77703
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 IDM limited
Limited by RDS(on) (1)
10
ID limited
1
0.1
Axis Title
100 μs
1 ms
10 ms
100 ms
1s
10 s
DC
10000
1000
100
TA = 25 °C
Single pulse
0.01
0.1
BVDSS limited
1 10
10
100
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
SiA477EDJT
Vishay Siliconix
35
30
25
20
15
10
5
0
0
Axis Title
10000
1000
Package limited
100
25 50 75 100 125
TC - Case Temperature (°C)
2nd line
Current Derating a
10
150
20
15
10
5
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1724-Rev. A, 29-Aug-16
5
Document Number: 77703
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SIA477EDJT.PDF ] | |
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