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PDF SIA469DJ Data sheet ( Hoja de datos )
| Número de pieza | SIA469DJ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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SiA469DJ
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
PowerPAK® SC-70-6L Single
D
D6
S5
4
1 2.05 mm
Top View
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = -10 V
RDS(on) max. () at VGS = -4.5 V
Qg typ. (nC)
ID (A) a
Configuration
S
7
1
2D
3D
G
Bottom View
-30
0.0265
0.0400
10
-12
Single
FEATURES
• TrenchFET® Gen III p-channel power MOSFET
• Thermally enhanced PowerPAK® SC-70 package
• 100% Rg tested
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
please
see
APPLICATIONS
• Load switch
• DC/DC converters
• High speed switching
• Power management in
battery-operated, mobile and
wearable devices
S
G
P-Channel MOSFET
D
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SC-70
SiA469DJ-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 100 μs)
TC = 25 °C
TC = 70 °C
TA =25 °C
TA = 70 °C
Continuous source-drain diode current
TC = 25 °C
TA = 70 °C
TC = 25 °C
Maximum power dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
-30
± 20
-12 a
-12 a
-8.8 b, c
-7 b, c
-40
-12 a
-2.7 b, c
15.6
10
3.3 b, c
2.1 b, c
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b, f
Maximum junction-to-case (drain)
t5s
Steady state
RthJA
RthJC
30
6.5
38
°C/W
8
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S16-2441Rev. A, 05-Dec-16
1
Document Number: 75354
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiA469DJ
Vishay Siliconix
Axis Title
25 10000
Axis Title
20 10000
20
15
10 Package limited
5
1000
100
15
10
5
1000
100
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Current Derating a
0
0
25 50 75 100 125
TC - CaseTemperature (°C)
2nd line
10
150
Power, Junction-to-Case
Note
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-2441Rev. A, 05-Dec-16
5
Document Number: 75354
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIA469DJ.PDF ] | |
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