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PDF SI7972DP Data sheet ( Hoja de datos )
| Número de pieza | SI7972DP | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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Si7972DP
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PowerPAK® SO-8 Dual
D1
D1 8
D2 7
D2 6
5
6.15 mm
1
Top View
5.15 mm
1
2 S1
3 G1
4 S2
G2
Bottom View
FEATURES
• TrenchFET® power MOSFET
• PWM optimized
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• System power DC/DC
D1 D2
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A) a Qg (TYP.)
60
0.018 at VGS = 10 V
8
0.021 at VGS = 4.5 V
8
7.1
Ordering Information:
Si7972DP-T1-GE3 (lead (Pb)-free and halogen-free)
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source-Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
60
± 20
8a
8a
8a
8a
40
19
3 b, c
22
14
3.6 b, c
2.3 b, c
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
SYMBOL
RthJA
RthJC
TYP.
26
4
MAX.
35
5.5
UNIT
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S16-1448-Rev. A, 25-Jul-16
1
Document Number: 75360
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
32
10000
Si7972DP
Vishay Siliconix
24
16
Package limited
8
1000
100
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
28 10000
Axis Title
2.0 10000
21 1.5
1000
1000
14 1.0
100 100
7 0.5
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Power, Junction-to-Case
0 10
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1448-Rev. A, 25-Jul-16
5
Document Number: 75360
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI7972DP.PDF ] | |
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