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PDF SI7613DN Data sheet ( Hoja de datos )
| Número de pieza | SI7613DN | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
P-Channel 20-V (D-S) MOSFET
Si7613DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 20 0.0087 at VGS = - 10 V
0.014 at VGS = - 4.5V
ID (A)e,f
- 35
- 35
Qg (Typ.)
28.1 nC
PowerPAK 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
Ordering Information: Si7613DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm
Profile
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• Adaptor Switch
• Notebook PC
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
VDS
VGS
ID
IDM
IS
- 20
± 16
- 35e
- 35e
- 17a, b
- 13.6a, b
- 60
- 35e
- 3.2a, b
V
A
TC = 25 °C
52.1
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
33.3
3.8a, b
2.4a, b
- 50 to 150
260
W
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
f. Based on TC = 25 °C
Document Number: 64809
S09-0662-Rev. A, 20-Apr-09
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
60
50
40 Package Limited
30
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
75 2.0
Si7613DN
Vishay Siliconix
60
1.5
45
1.0
30
0.5
15
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64809
S09-0662-Rev. A, 20-Apr-09
www.vishay.com
5
5 Page 
AN822
Vishay Siliconix
105
Spreading Copper (sq. in.)
95
85
75
65
55
0%
45
100 %
50 %
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
Figure 5. Spreading Copper - Si7401DN
130
120 Spreading Copper (sq. in.)
110
100
90
80
50 %
100 %
70
60 0 %
50
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
Figure 6. Spreading Copper - Junction-to-Ambient Performance
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal perfor-
mance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
The PowerPAK 1212-8 combines small size with attrac-
tive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps rDS(ON) low, and permits the device to
handle more current than a same- or larger-size MOS-
FET die in the standard TSSOP-8 or SO-8 packages.
www.vishay.com
4
Document Number 71681
03-Mar-06
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SI7613DN.PDF ] | |
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