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PDF SI7615CDN Data sheet ( Hoja de datos )
| Número de pieza | SI7615CDN | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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www.vishay.com
Si7615CDN
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PowerPAK® 1212-8 Single
D
D8
D7
D6
5
3.3 mm
1
Top View
3.3 mm
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = -4.5 V
RDS(on) max. () at VGS = -3.7 V
RDS(on) max. () at VGS = -2.5 V
RDS(on) max. () at VGS = -1.8 V
Qg typ. (nC)
ID (A) a, g
Configuration
1
2S
3S
4S
G
Bottom View
-20
0.0090
0.0100
0.0117
0.0203
42
-35
Single
FEATURES
• TrenchFET® Gen III p-channel power MOSFET
• RDS(on) rating at VGS = -1.8 V
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
please
see
APPLICATIONS
• Battery management in mobile devices
S
• Battery switch
• Load switch
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8
Si7615CDN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 100 μs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum power dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
-20
±8
-35 a
-35 a
-16.3 b, c
-13 b, c
-80
-27.4
-3 b, c
-20
20
33
21.1
3.6 b, c
2.3 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b, f
Maximum junction-to-case (drain)
t 10 s
Steady state
RthJA
RthJC
28
2.9
36
3.8
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
g. TC = 25 °C.
S16-1778-Rev. A, 05-Sep-16
1
Document Number: 77771
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
60
10000
45
Package limited
30
15
1000
100
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Current Derating a
Si7615CDN
Vishay Siliconix
Axis Title
40 10000
Axis Title
2.0 10000
30 1.5
1000
1000
20 1.0
100 100
10 0.5
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Power, Junction-to-Case
0 10
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1778-Rev. A, 05-Sep-16
5
Document Number: 77771
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
AN822
Vishay Siliconix
105
Spreading Copper (sq. in.)
95
85
75
65
55
0%
45
100 %
50 %
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
Figure 5. Spreading Copper - Si7401DN
130
120 Spreading Copper (sq. in.)
110
100
90
80
50 %
100 %
70
60 0 %
50
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
Figure 6. Spreading Copper - Junction-to-Ambient Performance
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal perfor-
mance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
The PowerPAK 1212-8 combines small size with attrac-
tive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps rDS(ON) low, and permits the device to
handle more current than a same- or larger-size MOS-
FET die in the standard TSSOP-8 or SO-8 packages.
www.vishay.com
4
Document Number 71681
03-Mar-06
11 Page | ||
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