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PDF SI7540ADP Data sheet ( Hoja de datos )
| Número de pieza | SI7540ADP | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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www.vishay.com
Si7540ADP
Vishay Siliconix
N- and P-Channel 20 V (D-S) MOSFET
PowerPAK® SO-8 Dual
D1
D1 8
D2 7
D2 6
5
6.15 mm
1
Top View
5.15 mm
1
2 S1
3 G1
4 S2
G2
Bottom View
PRODUCT SUMMARY
N-CHANNEL P-CHANNEL
VDS (V)
RDS(on) () at VGS = ± 4.5 V
RDS(on) () at VGS = ± 2.5 V
Qg typ. (nC)
ID (A) a, b
Configuration
20 -20
0.0150
0.0280
0.0195
0.0430
8.5 16
12 9
N- and p-pair
FEATURES
• TrenchFET® power MOSFETs
• Thermally enhanced PowerPAK®
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converters
• Synchronous buck converter
• Synchronous rectifier
• Load switch
• Motor drive switch
G1
D1
G2
S2
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8
Si7540ADP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
10 s STEADY
P-CHANNEL
10 s STEADY
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) a, b
Pulsed drain current
TA = 25 °C
TA = 70 °C
Continuous source current (diode conduction) b
Maximum power dissipation b
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 -20
± 12
12 8 -9 -6.1
9.8 6.5 -7.3 -4.9
35 -25
2.9 1.3 -2.9 -1.3
3.5 1.6 3.5 1.6
2.3 1 2.3 1
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
N-CHANNEL
TYP. MAX.
P-CHANNEL
TYP. MAX.
UNIT
Maximum junction-to-ambient b, f
Maximum junction-to-case (drain)
t 10 s
Steady state
RthJA
RthJC
25 35 25 35
4.6 6 4.8 6.3
°C/W
Notes
a. Based on silicon capability only.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S16-2274-Rev. C, 14-Nov-16
1
Document Number: 62951
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7540ADP
Vishay Siliconix
100
TJ = 150 °C
10 TJ = 25 °C
1
0.04
0.03
ID = 12 A
0.02
0.01
TJ = 125 °C
TJ = 25 °C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.3
1.2
1.1
1.0
0.9
0.8 ID = 250 μA
0.7
0.6
0.5
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
40
30
20
10
0
0.001 0.01
0.1 1
10
Time (s)
100 1000
Single Pulse Power (Junction-to-Ambient)
100 Limited by IDM
Limited by RDS(on)*
Limited by IDon
10
100 μs
1
0.1
TA = 25 °C
1 ms
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
S16-2274-Rev. C, 14-Nov-16
5
Document Number: 62951
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
www.vishay.com
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7540ADP
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - TA = PDMZthJA (t)
4. Surface Mounted
0.001
0.01 0.1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.0001
0.02
Single Pulse
0.001
0.01
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62951.
S16-2274-Rev. C, 14-Nov-16
11
Document Number: 62951
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet SI7540ADP.PDF ] | |
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