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PDF SI5948DU Data sheet ( Hoja de datos )
| Número de pieza | SI5948DU | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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Si5948DU
Vishay Siliconix
Dual N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () MAX.
0.082 at VGS = 10 V
0.094 at VGS = 4.5 V
ID (A)
6a
6a
Qg (TYP.)
2.2 nC
PowerPAK® ChipFET® Dual
D2
D2
6
D1
7
D1
8
5
1 3.0 mm
Top View
1
4
G2
3
S2
2
G1
S1
Bottom View
Marking Code: CG
Ordering Information:
Si5948DU-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• New thermally enhanced PowerPAK®
ChipFET® package
- Small footprint area
- Low on-resistance
- Thin 0.8 mm profile
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• DC/DC power supply
D1 D2
G1
N-Channel MOSFET
S1
G2
N-Channel MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 100 μs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TA = 70 °C
TJ, Tstg
LIMIT
40
± 20
6a
5.5
3.7 b, c
2.9 b, c
10
5.8
1.7 b, c
6
1.8
7
4.4
2 b, c
1.3 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
SYMBOL
RthJA
RthJC
TYPICAL
52
15
MAXIMUM
62
18
UNIT
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
S16-1127-Rev. A, 06-Jun-16
1
Document Number: 76424
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8 10
Si5948DU
Vishay Siliconix
6
Package Limited
4
2
8
6
4
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating a
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1127-Rev. A, 06-Jun-16
5
Document Number: 76424
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SI5948DU.PDF ] | |
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