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PDF SI5448DU Data sheet ( Hoja de datos )
| Número de pieza | SI5448DU | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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www.vishay.com
Si5448DU
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PowerPAK® ChipFET® Single
D
S
D
6
D
7
8
5
1 3.0 mm
Top View
1
S
9
4
3
D
2
D
D
G
Bottom View
FEATURES
• TrenchFET® Gen IV power MOSFET
• 100 % Rg and UIS tested
• Thermally enhanced PowerPAK ChipFET package
-Compact footprint area - less than 6.09 mm2
-Thin 0.8 mm profile
• 56 % lower RDS(ON) than the prior generation
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A) a, g
Configuration
40
0.00775
0.00947
12.6
25
Single
APPLICATIONS
• DC/DC converters
• Motor drive control
• Synchronous rectification
G
• Battery management
• Load switch
N-Channel MOSFET
D
S
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK ChipFET
Si5448DU-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 100 μs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum power dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
40
+20 / -16
25 a
25 a
15.9 b, c
12.7 b, c
100
25 a
2.6 b, c
15
11.25
31
20
3.1 b, c
2 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b, f
Maximum junction-to-case (drain)
t 10 s
Steady state
RthJA
RthJC
34
4
40
4
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 90 °C/W.
g. TC = 25 °C.
S16-2343-Rev. A, 14-Nov-16
1
Document Number: 76149
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
60
10000
45
30 Package limited
15
1000
100
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Current Derating a
Si5448DU
Vishay Siliconix
Axis Title
40 10000
Axis Title
1.8 10000
30 1.35
1000
1000
20 0.9
100 100
10 0.45
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Power, Junction-to-Case
0 10
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-2343-Rev. A, 14-Nov-16
5
Document Number: 76149
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
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| PDF Descargar | [ Datasheet SI5448DU.PDF ] | |
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