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PDF SI4833BDY Data sheet ( Hoja de datos )
| Número de pieza | SI4833BDY | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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Si4833BDY
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) ()
0.068 at VGS = - 10 V
0.110 at VGS = - 4.5 V
ID (A)a
- 4.6
- 3.4
Qg (Typ.)
4.6
SCHOTTKY PRODUCT SUMMARY
VKA (V)
30
VF (V)
Diode Forward Voltage
0.44 V at 1 A
ID (A)a
2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT® Plus Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Battery Management in Notebook PC
• Non-synchronous Buck Converter in HDD
A1
A2
S3
G4
SO-8
8K
7K
6D
5D
S
G
Top View
D
Ordering Information: Si4833BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (Schottky)
VKA
Gate-Source Voltage (MOSFET)
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (MOSFET) (t = 300 µs)
IDM
Continuous Source Current (MOSFET Diode Conduction)
TC = 25 °C
TA = 25 °C
IS
Average Forward Current (Schottky)
IF
Pulsed Forward Current (Schottky)
IFM
TC = 25 °C
Maximum Power Dissipation (MOSFET and Schottky)
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
K
A
Limit
- 30
- 30
± 20
- 4.6
- 3.6
- 3.8b, c
- 3b, c
- 20
-2
- 1.4b, c
- 1.4b
-2
2.75
1.75
1.75b, c
1.10b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET and Schottky)b, c, d
Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on FR4 board.
c. t 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Symbol
RthJA
RthJF
Typical
60
35
Maximum
71.5
45
Unit
°C/W
Document Number: 67537
www.vishay.com
S11-1649-Rev. B, 15-Aug-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
Si4833BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
1
TJ = 150 °C
0.1 TJ = 25 °C
0.5
0.4
0.3
0.2
ID = 3.6 A
0.01 0.1 TJ = 125 °C
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
0.0
0
TJ = 25 °C
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
0.6 50
0.4
ID = 250 μA
40
0.2
ID = 5 mA
30
0 20
- 0.2
10
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01 0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
10
ID Limited
1
Limited by RDS(on)*
1 ms
10 ms
100 ms
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
1s
10 s
DC
0.01
0.01 0.1 1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Case
Document Number: 67537
www.vishay.com
S11-1649-Rev. B, 15-Aug-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
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Revision: 13-Jun-16
1 Document Number: 91000
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