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PDF SI3493DDV Data sheet ( Hoja de datos )
| Número de pieza | SI3493DDV | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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Si3493DDV
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
TSOP-6 Single
S
4
D
5
D
6
Marking code: BQ
1
D
Top View
2
D
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = -4.5 V
RDS(on) max. () at VGS = -2.5 V
RDS(on) max. () at VGS = -1.8 V
Qg typ. (nC)
ID (A) a, d
Configuration
3
G
-20
0.0240
0.0321
0.0511
19.8
-8
Single
FEATURES
• TrenchFET® Gen III p-channel power MOSFET
• RDS(on) rating at VGS = -1.8 V
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
please
see
APPLICATIONS
• Battery management in mobile devices
• Battery switch
• Load switch
G
• PA switch
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
TSOP-6
Si3493DDV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 100 μs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum power dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
-20
±8
-8 a
-8
-7.5 b, c
-6 b, c
-32
-3
-1.67 b, c
-10
5
3.6
2.3
2 b, c
1.3 b, c
-55 to +150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b
t5s
Maximum junction-to-case (drain)
Steady state
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
SYMBOL
RthJA
RthJC
TYPICAL
50
28
MAXIMUM
62.5
35
UNIT
°C/W
S16-2645-Rev. A, 26-Dec-16
1
Document Number: 74735
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
12
10000
9
1000
6
100
3
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Current Derating a
Si3493DDV
Vishay Siliconix
Axis Title
4.5 10000
Axis Title
1.5 10000
3.6 1.2
1000
1000
2.7 0.9
1.8 0.6
100 100
0.9 0.3
0 10
0 25 50 75 100 125 150
TC - Case Temperature (°C)
2nd line
Power, Junction-to-Case
0 10
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-2645-Rev. A, 26-Dec-16
5
Document Number: 74735
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
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| PDF Descargar | [ Datasheet SI3493DDV.PDF ] | |
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