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Número de pieza | SI3424BDV | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Vishay | |
Logotipo | ||
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N-Channel 30-V (D-S) MOSFET
Si3424BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.028 at VGS = 10 V
30
0.038 at VGS = 4.5 V
ID (A)
8a
7
Qg (Typ)
6.2
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• Load Switch for Portable Devices
RoHS
COMPLIANT
TSOP-6
Top View
D
3 mm D
G
16
25
34
2.85 mm
D
D
S
Marking Code
AG XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3424BDV-T1-E3 (Lead (Pb)-free)
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipationa
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
8a, b
6.7
7c, d
5.6c, d
30
2.48
1.74c, d
2.98
1.9
2.1c, d
1.3c, d
- 55 to 150
Unit
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientc
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Steady State
Notes:
a. Package Limited.
b. Based on TC = 25 °C.
c. Surface Mounted on 1" x 1" FR4 board.
d. t = 5 s.
Symbol
RthJA
RthJA
RthJF
Typical
50
90
35
Maximum
60
110
42
Unit
°C/W
Document Number: 74623
S-72692-Rev. B, 24-Dec-07
www.vishay.com
1
1 page New Product
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10 4.0
Si3424BDV
Vishay Siliconix
8
Package Limited
6
3.2
2.4
4 1.6
2 0.8
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74623
S-72692-Rev. B, 24-Dec-07
www.vishay.com
5
5 Page |
Páginas | Total 7 Páginas | |
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SI3424BDV | MOSFET ( Transistor ) | Vishay |
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