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PDF SI3127DV Data sheet ( Hoja de datos )
| Número de pieza | SI3127DV | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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Si3127DV
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-60
RDS(on) (Ω) MAX.
0.089 at VGS = -10 V
0.146 at VGS = -4.5 V
ID (A) d
-5.1
-4
TSOP-6 Single
S
4
D
5
D
6
Qg (TYP.)
10.1 nC
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
APPLICATIONS
• Load switches
• DC/DC converter
S
1
D
Top View
2
D
3
G
Marking Code: BL
Ordering Information:
Si3127DV-T1-GE3 (lead (Pb)-free and halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
-60
± 20
-5.1
-4.1
-3.5 a,b
-2.8 a,b
-20
-3.5
-1.7 a,b
-15
11.25
4.2
2.7
2 a,b
1.3 a,b
-55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a,c
Maximum Junction-to-Foot
t ≤ 10 s
Steady State
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 110 °C/W.
d. Based on TC = 25 °C.
SYMBOL
RthJA
RthJF
TYPICAL
40
25
MAXIMUM
62.5
30
UNIT
°C/W
S14-0767-Rev. A, 14-Apr-14
1
Document Number: 64282
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6
Si3127DV
Vishay Siliconix
4.5
3
1.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
5
4
3
2
1
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Foot
1.5
1.2
0.9
0.6
0.3
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
150
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0767-Rev. A, 14-Apr-14
5
Document Number: 64282
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
1 Document Number: 91000
11 Page | ||
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