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PDF SI1078X Data sheet ( Hoja de datos )
| Número de pieza | SI1078X | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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Si1078X
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () MAX.
0.142 at VGS = 10 V
0.154 at VGS = 4 V
0.195 at VGS = 2.5 V
ID (A)
1.02
0.98
0.87
SC-89 Single (6 leads)
S
D4
D5
6
Qg (TYP.)
1.5
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg tested
• Typical ESD performance 1400 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load switch for portable devices
3
2G
1D
D
Top View
Marking Code: D
Ordering Information:
Si1078X-T1-GE3 (lead (Pb)-free and halogen-free)
D
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) a
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
30
± 12
1.02 a, b
0.82 a, b
6
0.2 a, b
0.24 a, b
0.15 a, b
-55 to +150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a, c
t5s
Steady State
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 650 °C/W.
SYMBOL
RthJA
TYPICAL
440
540
MAXIMUM
530
650
UNIT
°C/W
S16-1056-Rev. A, 30-May-16
1
Document Number: 68549
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Si1078X
Vishay Siliconix
10
IDM limited
Lim1ited by RDS(on) (1)
Axis Title
0.1
10000
100 μs
1 ms
1000
10 ms
100 ms 100
0.01
DC, 10s, 1s
TA = 25 °C
Single pulse
0.001
0.1
1
BVDSS limited
10
10
100
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Notes:
PDM
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 540 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68549.
S16-1056-Rev. A, 30-May-16
5
Document Number: 68549
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SI1078X.PDF ] | |
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