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PDF SI1013CX Data sheet ( Hoja de datos )
| Número de pieza | SI1013CX | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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Si1013CX
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.760 at VGS = -4.5 V
-20 1.040 at VGS = -2.5 V
1.500 at VGS = -1.8 V
ID (A)
-0.45
-0.40
-0.32
Qg (TYP.) (nC)
1
SC-89 (3 leads)
D
3
1
G
Top View
2
S
Marking Code: 6
Ordering Information:
Si1013CX-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg tested
• Typical ESD protection: 1000 V (HBM)
• Fast switching speed
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load / power switch for portable
devices
• Drivers: relays, solenoids, displays
• Battery operated systems
G
S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current (t = 300 μs)
IDM
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TA = 25 °C
TA = 25 °C
TA = 70 °C
IS
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
-20
±8
-0.45 b, c
-0.36 b, c
-1.5
-0.16 b, c
0.19 b, c
0.12 b, c
-55 to +150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a, b
t≤5s
Steady State
Notes
a. Maximum under steady state conditions is 650 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
SYMBOL
RthJA
TYPICAL
440
540
MAXIMUM
530
650
UNIT
°C/W
S14-1601-Rev. B, 11-Aug-14
1
Document Number: 67995
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si1013CX
Vishay Siliconix
10
Limited by RDS(on)*
1
BVDSS Limited
100 μs
1 ms
10 ms
0.1
100 ms
TA = 25 °C
Single Pulse
0.01
0.1
1
1s
10 s, DC
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
0.25
0.20
0.15
0.10
0.05
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01 0.1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67995.
S14-1601-Rev. B, 11-Aug-14
5
Document Number: 67995
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SI1013CX.PDF ] | |
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