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Número de pieza | SI8489EDB | |
Descripción | P-Channel 20V (D-S) MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
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No Preview Available ! P-Channel 20 V (D-S) MOSFET
Si8489EDB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.044 at VGS = - 10 V
- 20 0.054 at VGS = - 4.5 V
0.082 at VGS = - 2.5 V
MICRO FOOT
ID (A)a, e
- 5.4
- 4.9
- 3.9
Qg (Typ.)
9.5 nC
Bump Side View
Backside View
SG
21
SD
34
Device Marking: 8489
xxx = Date/Lot Traceability Code
Ordering Information:
Si8489EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• Small 1 mm x 1 mm max. outline area
• Low 0.548 mm max. profile
• Typical ESD protection 2500 V HBM
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load switches and charger switches
• Battery management
• For smart phones and tablet PCs
G
S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditionsc
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
VPR
IR/Convection
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 20
± 12
- 5.4a
- 4.3a
- 3.6b
- 2.8b
- 20
- 1.5a
- 0.65b
1.8a
1.1a
0.78b
0.5b
- 55 to 150
260
260
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on TA = 25 °C.
Unit
V
A
W
°C
Document Number: 62752
For technical questions, contact: [email protected]
www.vishay.com
S12-1763-Rev. A, 23-Jul-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.20 25
0.15
0.10
0.05
ID = 1.5 A
TJ = 125 °C
TJ = 25 °C
20
15
10
5
Si8489EDB
Vishay Siliconix
0.00
0
1234
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
100
Limited by RDS(on)*
10
100 µs
1 1 ms
0.1
TA = 25 °C
10 ms
100 ms
10 s, 1s
DC
0.01
0.1
BVDSS Limited
1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
5
0
0.001 0.01 0.1 1 10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
Note:
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation PD is based on TJ(max.) = 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
1.5
4 1.2
3 0.9
2 0.6
1 0.3
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Current Derating*
0.0
25
50 75 100 125
TA - Ambient Temperature (°C)
Power Derating
150
Document Number: 62752
For technical questions, contact: [email protected]
www.vishay.com
S12-1763-Rev. A, 23-Jul-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet SI8489EDB.PDF ] |
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