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PDF SI8487DB Data sheet ( Hoja de datos )
| Número de pieza | SI8487DB | |
| Descripción | P-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si8487DB
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-30
RDS(on) () MAX.
0.031 at VGS = -10 V
0.035 at VGS = -4.5 V
0.045 at VGS = -2.5 V
ID (A) a, e
-7.7
-7.3
-6.4
MICRO FOOT® 1.6 x 1.6
D
D2
848x7xx
3
1
1 1.6 mm
4G
S
Backside View
Bump Side View
Marking Code: 8487
Ordering Information:
Si8487DB-T1-E1 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® power MOSFET
• Low-on resistance
• Ultra-small 1.6 mm x 1.6 mm maximum outline
• Ultra-thin 0.6 mm maximum height
• Pin compatible to Si8409DB
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Mobile computing, smart phones,
tablet PCs
- Load switch
- Battery switch
- Charger switch
- OVP switch
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 μs)
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 25 °C
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
Package Reflow Conditions c
VPR
IR / convection
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
-30
± 12
-7.7 a
-6.2 a
-4.9 b
-4 b
-25
-2.3 a
-0.92 b
2.7 a
1.8 a
1.1 b
0.73 b
-55 to +150
260
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum Junction-to-Ambient a, f
Maximum Junction-to-Ambient b, g
t=5s
t=5s
RthJA
RthJA
35
85
45
110
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC / JEDEC® (J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on TA = 25 °C.
f. Maximum under steady state conditions is 85 °C/W.
g. Maximum under steady state conditions is 175 °C/W.
UNIT
°C/W
S15-1692-Rev. E, 20-Jul-15
1
Document Number: 63483
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si8487DB
Vishay Siliconix
8 1.5
1.2
6
0.9
4
0.6
2
0.3
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
0.0
25
50 75 100 125
TA - Ambient Temperature (°C)
150
Current Derating a
Power Derating
Notes
• When mounted on 1" x 1" FR4 with full copper.
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-1692-Rev. E, 20-Jul-15
5
Document Number: 63483
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
1 Document Number: 91000
11 Page | ||
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| PDF Descargar | [ Datasheet SI8487DB.PDF ] | |
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