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Número de pieza | SI4062DY | |
Descripción | N-Channel 60V (D-S) MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
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No Preview Available ! N-Channel 60 V (D-S) MOSFET
Si4062DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
60
RDS(on) () Max.
0.0042 at VGS = 10 V
0.0054 at VGS = 6 V
0.0069 at VGS = 4.5 V
SO-8
ID (A)a
32.1
28.3
25
Qg (Typ.)
18.8 nC
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information:
Si4062DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Primary Side Switch
• Industrial
• Synchronous Rectification
• Load Switch
• DC/DC Converters
• DC/AC Inverters
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
60
± 20
32.1
25.7
21.5b, c
17b, c
150
7
3.1b, c
25
31.2
7.8
5
3.5b, c
2.2b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 80 °C/W.
Symbol
RthJA
RthJF
Typical
29
13
Maximum
35
16
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 62857
For technical questions, contact: [email protected]
www.vishay.com
S13-1383-Rev. A, 17-Jun-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
35
Si4062DY
Vishay Siliconix
28
21
14
7
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
10 2.0
8 1.6
6 1.2
4 0.8
2 0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Foot
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62857
For technical questions, contact: [email protected]
www.vishay.com
S13-1383-Rev. A, 17-Jun-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet SI4062DY.PDF ] |
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