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PDF SQ9945AEY Data sheet ( Hoja de datos )
| Número de pieza | SQ9945AEY | |
| Descripción | Automotive Dual N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SQ9945AEY
Vishay Siliconix
Automotive
Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
ID (A)
Configuration
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2 G1
5 D2
D1
60
0.080
± 3.7
Dual
D2
G2
FEATURES
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
AEC-Q101 RELIABILITY
• Passed all AEC-Q101 Reliability Testing
• Characterization Ongoing
Top View
S1
N-Channel MOSFET
S2
N-Channel MOSFET
Pb-free
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
SO-8
SQ9945AEY-T1-E3
SQ9945AEY-T1
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TC = 25 °C
TC = 70 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
L = 0.1 mH
EAS
IAS
Maximum Power Dissipationb
TC = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
60
± 20
- 3.7
- 3.2
2
25
-
-
2.4
1.7
- 55 to + 175
UNIT
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
-
-
UNIT
°C/W
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 74499
S-81559-Rev. B, 23-Oct-08
http://oneic.com/
www.vishay.com
1
1 page  
SQ9945AEY
Vishay Siliconix
THERMAL RATINGS TA = 25 °C, unless otherwise noted
120
100
80 Graph to be available
60 upon completion
of testing
40
20
0
0 25 50 75 100 125 150 175
TC - Ambient Temperature (°C)
Maximum Drain Current vs. Ambient Temperature
120
90
60
30
0
0.001 0.01 0.1 1 10 100
Time (s)
Single Pulse Power, Junction-to-Ambient
1000
1000
1000
100
Graph to be available
upon completion
10 of testing
1
0.1
0.00001
0.6
0.0001 0.001 0.01
0.1
TAV (s)
Avalanche Current vs. Time
1
0.3
ID = 250 µA
0.0
- 0.3
- 0.6
- 0.9
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
Document Number: 74499
S-81559-Rev. B, 23-Oct-08
http://oneic.com/
100
Graph to be available
upon completion
10
of testing
1
0.1
0.1
* VGS
1 10 100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
www.vishay.com
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SQ9945AEY.PDF ] | |
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