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PDF SiP12101 Data sheet ( Hoja de datos )
| Número de pieza | SiP12101 | |
| Descripción | High Performance Step-Down DC-DC Converter | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SiP12101
Vishay Siliconix
High Performance Step-Down DC-DC Converter
With Adjustable Output Voltage
DESCRIPTION
The SiP12101 is a high efficiency 600 mA step down
converter with internal low on resistance power MOSFET
switch and synchronous rectifier transistors. It is designed to
convert one cell Lilon battery or three cell alkaline battery
voltages to an adjustable dc output. The integrated high
frequency error amplifier with internal compensation
minimizes external components.
2 MHz switching permits use of small external inductor and
capacitor sizes allowing one of the smallest solutions.
The SiP12101 is available in the 10 pin MSOP and is
specified to operate over the industrial temperature range of
- 40 °C to 85 °C.
FEATURES
• 2 MHz PWM operation
• Integrated MOSFET switches
• 2.6 V to 6.0 V input voltage range
• Minimal number of external components
• Up to 96 % conversion efficiency
• 600 mA load capability
• 100 % cuty cycle allows low dropout
• Integrated compensation circuit
• Over-current protection
• Shutdown current < 2 mA
• Thermal shutdown
• Integrated UVLO
• 10 pin MSOP
APPLICATIONS
• PDAs/palmtop PCs
• LCD podules
• Portable image scanners
• GPS receivers
• Smart phones
• MP3 players
• 3G cell phone
• Digital cameras
TYPICAL APPLICATIONS CIRCUIT
BATTERY
CIN
10 µF
ENABLE
VDD
VIN
VDD
VDD
SiP12101
LX
PGND
FB
SD REF
VDD
AGND
2.2 µH
COUT
4.7 µF
REF
VOUT
R1
R2
Document Number: 73057
S09-1453-Rev. B, 03-Aug-09
www.vishay.com
1
1 page  
DETAIL OPERATION
General
The SiP12101 is a high efficiency synchronous dc-dc
converter that is ideally suited for lithium ion battery or three
cell alkaline applications, as well as step-down of 3.3 V or
5.0 V supplies. The major blocks of the SiP12101 are shown
in the Functional Block Diagram. The 0.25 Ω internal
MOSFETs switching at a frequency of 2 MHz minimize PC
board space while providing high conversion efficiency and
performance. The high frequency error-amplifier with built-in
loop compensation minimizes external components and
provides rapid output settling times of < 30 µs. Sensing of the
inductor current for control is accomplished internally without
power wasting resistors.
Start-Up
When voltage is applied to VIN and VDD, the under-voltage
lockout (UVLO) circuit prevents the oscillator and control
circuitry from turning on until the voltage on the exceeds
2.4 V. With a typical UVLO hysteresis of 0.1 V, the converter
operates continuously until the voltage on VIN drops below
2.3 V, whereupon the converter shuts down. This hysteresis
prevents false start-stop cycling as the input voltage
approaches the UVLO switching threshold. The start-up
sequence occurs after SD switches from LOW to HIGH with
VIN applied, or after VIN rises above the UVLO threshold and
SD is a logic HIGH.
PWM
SiP12101 operates as a 2 MHz fixed frequency voltage
mode converter. An NMOS synchronous rectification
MOSFET transistor provides very high conversion efficiency
for large load currents by minimizing the conduction losses.
Output load currents can range from 0 to 600 mA.
The error amplifier and comparator control the duty cycle of
the PMOS MOSFET to continuously force the REF pin and
FB pin voltages to be equal. As the input-to-output voltage
difference drops, the duty cycle of the PMOS MOSFET can
reach 100 % to allow system designers to extract the
maximum stored energy from the battery. The dropout
voltage is 190 mV at 600 mA.
During each cycle, the PMOS switch current is limited to a
maximum of 1.5 A (typical) thereby protecting the IC while
continuing to force maximum current into the load.
Oscillator
The internal oscillator provides for a fixed 2 MHz switching
frequency.
Dynamic Output Voltage Control (REF)
The SiP12101 is designed with an adjustable output voltage
which has a change of VFB to VIN - VDROP. VOUT is defined
according to the following relationship:
( )VOUT =
1+
R1
R2
× VFB
Document Number: 73057
S09-1453-Rev. B, 03-Aug-09
SiP12101
Vishay Siliconix
Converter Shutdown (SD pin)
With logic LOW level on the SD pin, the SiP12101 is
shutdown. Shutdown reduces current consumption to less
than 2 µA by shutting off all of the internal circuits. Both the
PMOS and NMOS transistors are turned off. A logic HIGH
enables the IC to start up as described in "Start-up" section.
Thermal Shutdown
The SiP12101 includes thermal shutdown circuitry, which
turns off the regulator when the junction temperature
exceeds 165 °C. Once the junction temperature drops below
145 °C, the regulator is enabled. If the condition causing the
over temperature, the SiP12101 begins thermal cycling,
turning the regulator on and off in response to junction
temperature. Restart from a thermal shutdown condition is
the same as described in the "Start-up" section.
www.vishay.com
5
5 Page 
TYPICAL LOAD TRANSIENT WAVEFORMS (VIN = 3.6 V, VOUT = 1.9 V)
SiP12101
Vishay Siliconix
ILOAD, 200 mA /div
10 µs/div
Load Transient
ILOAD = 30 to 500 mA, L = 2.2 µH
VOUT
(AC-Coupled)
50 mV/div
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73057.
Document Number: 73057
S09-1453-Rev. B, 03-Aug-09
www.vishay.com
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet SiP12101.PDF ] | |
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