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PDF Si8824EDB Data sheet ( Hoja de datos )
| Número de pieza | Si8824EDB | |
| Descripción | N-Channel 20V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si8824EDB
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.075 at VGS = 4.5 V
0.082 at VGS = 2.5 V
20 0.090 at VGS = 1.8 V
0.125 at VGS = 1.5 V
0.175 at VGS = 1.2 V
ID (A) a
2.9
2.7
2.6
2.2
1.5
Qg (TYP.)
2.7 nC
MICRO FOOT® 0.8 x 0.8
S
S2
xxxxx 3
1 0.8 mm
1
4G
D
Backside View
Bump Side View
Marking Code: AM
Ordering Information:
Si8824EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® power MOSFET
• Ultra small 0.8 mm x 0.8 mm outline
• Ultra thin 0.357 mm height
• Typical ESD protection 2000 V (HBM)
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Ultraportable and wearable devices
• Load switch with low voltage drop
• Load switch for 1.2 V, 1.5 V, and 1.8 V
power lines
G
• Small signal and high speed switching
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)
TA = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
IDM
Continuous Source-Drain Diode Current
TA = 25 °C
TA = 25 °C
IS
TA = 25 °C
Maximum Power Dissipation
TA = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c
TJ, Tstg
LIMIT
20
±5
2.9 a
2.3 a
2.1 b
1.7 b
15
0.7 a
0.4 b
0.9 a
0.6 a
0.5 b
0.3 b
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a, d
Maximum Junction-to-Ambient b, e
t≤5s
SYMBOL
RthJA
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC / JEDEC® (J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C / W.
e. Maximum under steady state conditions is 330 °C / W.
TYPICAL
105
200
MAXIMUM
135
260
UNIT
°C / W
S15-0338-Rev. A, 23-Feb-15
1
Document Number: 62978
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si8824EDB
Vishay Siliconix
100
Limited by RDS(on)*
10 ID Limited
1
IDM Limited
100 µs
1 ms
0.1
TA = 25 °C
100 ms
10 s
1 s, 10ms
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
3.0 0.8
2.5
0.6
2.0
1.5 0.4
1.0
0.5
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Current Derating*
Note
• When mounted on 1" x 1" FR4 with full copper.
150
0.2
0.0
25
50 75 100 125
TA - Ambient Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0338-Rev. A, 23-Feb-15
5
Document Number: 62978
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si8824EDB.PDF ] | |
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