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PDF SUP60030E Data sheet ( Hoja de datos )
| Número de pieza | SUP60030E | |
| Descripción | N-Channel 80 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
SUP60030E
Vishay Siliconix
N-Channel 80 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.0034 at VGS = 10 V
80
0.0036 at VGS = 7.5 V
ID (A) d
120
120
Qg (TYP.)
94
TO-220AB
Top View
S
D
G
Ordering Information:
SUP60030E-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® power MOSFET
• Maximum 175 °C junction temperature
• Very low Qgd reduces power loss from passing
through Vplateau
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
• DC/DC converter
• Power tools
• Motor drive switch
• DC/AC inverter
• Battery management
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current (t = 100 μs)
IDM
Avalanche Current
Single Avalanche Energy a
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation a
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
80
± 20
120 d
120 d
250
70
245
375 b
125 b
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) c
Junction-to-Case (Drain)
Notes
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
SYMBOL
RthJA
RthJC
LIMIT
40
0.4
UNIT
°C/W
S15-1869-Rev. A, 10-Aug-15
1
Document Number: 68293
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
1000
IDM Limited
100
ID Limited
10
SUP60030E
Vishay Siliconix
10 μs
100 μs
25 °C
150 °C
10
0.000001
0.00001
0.0001
Time (s)
0.001
0.01
Single Pulse Avalanche Current Capability vs. Time
1
1 Limited by RDS(on*)
1 ms
0.1
0.01
0.1
TC = 25°C
Single Pulse
BVDSS Limited
10 ms
100 ms
DC
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10 100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
S15-1869-Rev. A, 10-Aug-15
5
Document Number: 68293
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SUP60030E.PDF ] | |
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