PDF SiHH26N60E Data sheet ( Hoja de datos )

Número de pieza	SiHH26N60E
Descripción	E Series Power MOSFET
Fabricantes	Vishay
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No Preview Available ! www.vishay.com SiHH26N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 116 18 33 Single 0.117 PowerPAK® 8 x 8 4 1 2 3 3 Pin 4 G D Pin 1 Pin 2 Pin 3 S N-Channel MOSFET FEATURES • Fully lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK 8 x 8 SiHH26N60E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dt c TJ = 125 °C EAS PD TJ, Tstg dV/dt Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 5 A. c. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C. LIMIT 600 ± 30 25 16 50 1.6 353 202 -55 to +150 37 20 UNIT V A W/°C mJ W °C V/ns S15-2032-Rev. B, 24-Aug-15 1 Document Number: 91578 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1 page www.vishay.com 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.001 Single Pulse SiHH26N60E Vishay Siliconix 0.0001 0.0001 0.001 0.01 0.1 1 10 Pulse Time (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Ambient 100 1000 VDS VGS RG RD D.U.T. 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % +- VDD Fig. 13 - Switching Time Test Circuit VDS VDS tp VDD IAS Fig. 16 - Unclamped Inductive Waveforms VDS 90 % 10 V QGS QG QGD 10 % VGS td(on) tr td(off) tf Fig. 14 - Switching Time Waveforms VG Charge Fig. 17 - Basic Gate Charge Waveform VDS Vary tp to obtain required IAS RG 10 V tp L D.U.T IAS 0.01 Ω + - VDD Fig. 15 - Unclamped Inductive Test Circuit Current regulator Same type as D.U.T. 12 V 50 kΩ 0.2 µF 0.3 µF + D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S15-2032-Rev. B, 24-Aug-15 5 Document Number: 91578 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 5 Page

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