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Número de pieza | SPD02N80C3 | |
Descripción | Power Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SPD02N80C3 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! SPD02N80C3
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
800 V
2.7 W
12 nC
• Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda)
• Ultra low gate charge
PG-TO252-3
• Ultra low effective capacitances
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
xsx
Type
SPD02N80C3
Package
PG-TO252-3
Marking
02N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
I D=1 A, V DD=50 V
I D=2 A, V DD=50 V
V DS=0…640 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Value
2
1.2
6
90
0.05
2
50
±20
±30
42
-55 ... 150
a) non-Halogen free (OPN: SPD02N80C3BT); Halogen free (OPN: SPD02N80C3AT)
Rev. 2.921
page 1
Unit
A
mJ
A
V/ns
V
W
°C
20113-097-2381
1 page 5 Typ. output characteristics
I D=f(V DS); T j=150 °C; t p=10 µs
parameter: V GS
3
20 V
10 V 6 V
2.5
5.5 V
2
1.5
5V
1
4.5 V
0.5
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=1.2 A; V GS=10 V
20
5.6
4.8
4 98 %
SPD02N80C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
9
8.6
8.2
20 V
7.8
10 V
7.4
7 6V
6.6
6.2
5.5 V
5V
4V
4.5 V
5.8
5.4
5
25 0 1 2 3 4 5 6
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 µs
parameter: T j
7
25 °C
6
5
3.2 4
2.4 3
typ
1.6 2
150 °C
0.8 1
00
-60 -20 20 60 100 140 180
0 2 4 6 8 10
T j [°C]
V GS [V]
Rev. 2.912
page 5
20113-097-2381
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet SPD02N80C3.PDF ] |
Número de pieza | Descripción | Fabricantes |
SPD02N80C3 | Power Transistor | Infineon |
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