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PDF BSO150N03MDG Data sheet ( Hoja de datos )
| Número de pieza | BSO150N03MDG | |
| Descripción | Power-MOSFET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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BSO150N03MD G
OptiMOS™3 M-Series Power-MOSFET
Features
• Dual N-channel
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOMSW for High Frequency SMPS
• 100% Avalanche tested
• Very low on-resistance R DS(on) @ V GS=4.5 V
• Excellent gate charge x R DS(on) product (FOM)
• Qualified for consumer level application
Product Summary
V DS
R DS(on),max
ID
V GS=10 V
V GS=4.5 V
30 V
15 mΩ
18.2
9.3 A
PG-DSO-8
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSO150N03MD G
Package
PG-DSO-8
Marking
150N03MD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
I D V GS=10 V, T A=25 °C
V GS=10 V, T A=90 °C
V GS=4.5 V, T A=25 °C
V GS=4.5 V, T A=90 °C
Pulsed drain current2)
I D,pulse T A=25 °C
Avalanche current, single pulse3)
I AS
T A=25 °C
Avalanche energy, single pulse
E AS I D=9.3 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation1)
P tot T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
10 secs steady state
9.3 8 A
6.4 5.4
8.4 7
5.8 4.9
65
9.3
20
±20
2 1.4
-55 ... 150
55/150/56
mJ
V
W
°C
Rev.1.1
page 1
2009-11-19
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
60
10 V 5 V
4.5 V
50
40
30
20
10
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
60
BSO150N03MD G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
40
4V
3.5 V
3.2 V
3V
2.8 V
30
2.8 V
3V
3.2 V
20
10
3.5 V
4V
4.5 V
5V
10 V
0
3 0 5 10 15 20 25 30
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
35
50 30
25
40
20
30
15
20
10
10
150 °C
25 °C
0
012345
V GS [V]
5
0
0 5 10 15 20 25 30
I D [A]
Rev.1.1
page 5
2009-11-19
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSO150N03MDG.PDF ] | |
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