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PDF STF10NK60Z Data sheet ( Hoja de datos )
| Número de pieza | STF10NK60Z | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
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STF10NK60Z(045Y)
N-channel 600 V, 0.65 Ω, 10 A, SuperMESH™ Power MOSFET
Zener-protected TO-220FP narrow leads
Custom data
Features
Type
STF10NK60Z(045Y)
VDSS
600 V
RDS(on)
max
ID
Pw
< 0.75 Ω 10 A 35 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very good manufacturing reliability
Application
■ Switching applications
3
2
1
TO-220FP narrow leads
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STF10NK60Z(045Y)
Marking
10NK60Z
Package
TO-220FP narrow leads
Packaging
Tube
November 2009
Doc ID 16548 Rev 1
This is a document intended for a specific customer. It must not be released without first contacting Division marketing.
1/13
www.st.com
13
1 page  
STF10NK60Z(045Y)
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Electrical characteristics
Test conditions
VDD=300 V, ID=4 A,
RG=4.7 Ω, VGS=10 V
(see Figure 15)
VDD=300 V, ID=4 A,
RG=4.7 Ω, VGS=10 V
(see Figure 15)
Min. Typ. Max Unit
20 ns
20 ns
55 ns
30 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD=10 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=8 A, di/dt = 100 A/µs,
VDD=40 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
10 A
36 A
1.6 V
570 ns
4.3 µC
15 A
Table 9. Gate-source Zener diode
Symbol
Parameter
Test conditions
BVGSO
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
Min Typ Max Unit
30 V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components
Doc ID 16548 Rev 1
5/13
5 Page 
STF10NK60Z(045Y)
Package mechanical data
Table 10. TO-220FP narrow leads mechanical data
Dim.
Min.
mm
Typ.
A 4.4
B 2.5
D 2.5
E 0.45
F 0.75
F1 0.95
G 4.95
G1 2.4
H 10
L2 15.20
L3 28.6
L4 10.3
L5 2.60
2.70
L6 15.8
16.0
L7 9
Dia 3
Figure 21. TO-220FP narrow leads drawing
Max.
4.6
2.7
2.75
0.7
1
1.20
5.2
2.7
10.4
15.60
30.6
11.1
2.90
16.2
9.3
3.2
Doc ID 16548 Rev 1
8197858_Rev_B
11/13
11 Page | ||
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| PDF Descargar | [ Datasheet STF10NK60Z.PDF ] | |
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