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PDF ZXTN2010G Data sheet ( Hoja de datos )
| Número de pieza | ZXTN2010G | |
| Descripción | 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZXTN2010G (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Green ZXTN2010G
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR
SOT223
Features
BVCEO > 60V
IC = 6A Continuous Collector Current
ICM = 20A Peak Pulse Current
Low Saturation Voltage VCE(SAT) < 60mV Max @ 1A
RSAT = 35mΩ @ Ic =6A for Low Equivalent On-Resistance
hFE Specified up to 10A for High Gain Hold Up
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
Emergency Lighting Circuits
Motor Driving (Including DC Fans)
Solenoid, Relay and Actuator Drivers
DC Modules
Backlight Inverters
SOT223
Top View
Device Schematic
Pin-Out Top View
Ordering Information (Note 4)
Part Number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXTN2010GTA
ZXTN2010
7
12 1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZXTN
2010
ZXTN 2010 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
ZXTP2010G
Document number: DS33660 Rev. 3 - 2
1 of 7
www.diodes.com
December 2015
© Diodes Incorporated
1 page  
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
ZXTN2010G
1
Tamb=25OC
100m
10m
1m
I /I =50
CB
I /I =20
CB
I /I =10
CB
10m
100m
1
I Collector Current (A)
CV v I
CE(SAT) C
10
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1m
100OC
25OC
250
V =1V
CE
200
150
-55OC
100
50
10m 100m
1
10
I Collector Current (A)
C
h vI
FE C
0
1.4 V =1V
CE
1.2
1.0
25OC
0.8
-55OC
0.6
0.4
1m
100OC
10m
100m
1
I Collector Current (A)
C
V vI
BE(ON) C
10
0.6
I /I =10
0.5 C B
0.4
0.3 100OC
0.2 25OC
0.1
0.0
1m
-55OC
10m
100m
1
I Collector Current (A)
CV vI
CE(SAT) C
10
1.6
I /I =10
CB
1.4
1.2
1.0 -55OC
25OC
0.8
0.6
0.4
1m
100OC
10m
100m
1
I Collector Current (A)
C
V vI
BE(SAT) C
10
ZXTP2010G
Document number: DS33660 Rev. 3 - 2
5 of 7
www.diodes.com
December 2015
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ZXTN2010G.PDF ] | |
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| ZXTN2010G | 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 | Zetex Semiconductors |
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