(PDF) CMN2305 Datasheet - P-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CMN2305
Descripción	P-Channel Enhancement Mode Field Effect Transistor
Fabricantes	Cmos
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No Preview Available ! CMN2305 P-Channel Enhancement Mode Field Effect Transistor General Description The CMN2305 is P-channel enhancement mode Power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features RDS(ON)<65mΩ @ VGS=-4.5V RDS(ON)<80mΩ @ VGS=-2.5V Simple drive requirement Surface mount package Absolute Maximum Ratings Product Summery BVDSS -20V RDSON 65m Applications PWM applications Load switch Power management PA Switch SOT-23 Pin Configuration D S G SOT-23 (CMN2305) G ID -3.9A D S Symbol VDS VGS ID@TC=25 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Sou ce Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating -20 10 -3.9 -15 1.2 -55 to 150 -55 to 150 Units V V A A W Thermal Data Symbol R JA Parameter Thermal Resistance Junction-ambient Typ. --- Max. 90 Unit /W 1 1 page

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PDF CMN2305 Data sheet ( Hoja de datos )