(PDF) CMN3100 Datasheet - N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CMN3100
Descripción	N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	Cmos
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No Preview Available ! CMN3100 N-Channel Enhancement Mode Field Effect Transistor General Description The CMN3100 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features RDS(ON)<14mΩ @ VGS=10V RDS(ON)<16mΩ @ VGS=4.5V Simple drive requirement Surface mount package Absolute Maximum Ratings Product Summery BVDSS 30V RDSON 14m ID 8A Applications PWM applications Load switch Power management PA Switch SOT-23 Pin Configuration D S G SOT-23 (CMN3100) G D ● ◀▲ ● ● S Symbol VDS VGS ID IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Sou ce Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 30 20 8 20 1.4 -55 to 150 150 Units V V A A W Thermal Data Symbol R JA Parameter Thermal Resistance Junction-ambient (Steady State) Typ. --- Max. 125 Unit /W 1 1 page

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PDF CMN3100 Data sheet ( Hoja de datos )