|
|
Número de pieza | SSF10N90F1 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Silikron Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF10N90F1 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Main Product Characteristics:
VDSS
900V
RDS(on) 0.85Ω(typ.)
ID 10A ①
Features and Benefits:
Advanced MOSFET process technology
Low On Resistance
Low Gate Charge
Fast switching and reverse body recovery
TO-3P
SSF10N90F1
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25℃
ID @ TC = 100℃
IDM
PD @TC = 25℃
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V ①
Continuous Drain Current, VGS @ 10V ①
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=20mH
Avalanche Current @ L=20mH
Operating Junction and Storage Temperature Range
Max.
10
7
40
170
1.36
900
± 30
300
5.5
-55 to +150
Units
A
W
W/℃
V
V
mJ
A
℃
©Silikron Semiconductor CO., LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
page 1 of 6
1 page Ordering and Marking Information
Device Marking: SSF10N90F1
Package (Available)
TO-3P
Operating Temperature Range
C : -55 to 150 ℃
SSF10N90F1
Devices per Unit
Package Units/
Type
Tube
TO-3P
30
Tubes/Inner
Box
8
Units/Inner
Box
240
Inner
Boxes/Carton
Box
5
Units/Carton
Box
1200
Reliability Test Program
Test Item
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Conditions
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
Tj=150℃ or 150℃ @
100% of Max VGSS
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
page 5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSF10N90F1.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSF10N90F1 | MOSFET ( Transistor ) | Silikron Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |