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PDF SSIG20N135H Data sheet ( Hoja de datos )
| Número de pieza | SSIG20N135H | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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Main Product Characteristics:
VCES
1350V
VCE(sat) 1.9V (typ.)
ID 20A @ TC = 100°C
Features and Benefits:
Advanced Trench-FS Process Technology
Low Collector-Emitter Saturation Voltage, Typical
Data is 1.9V@20A
Fast Switching
High Input Impedance
Pb- Free Product
Power Switch Circuit of Induction Cooker
TO-247
SSIG20N135H
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating. These
features combine to make this design an extremely efficient and reliable device for use in power switching
application of induction cooker and a wide variety of other applications.
Absolute max Rating:
Symbol
IC @ TC = 25°C
IC @ TC = 100°C
ICM
PD @TC = 25°C
VCES
VGES
TJ
TSTG
TL
Parameter
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Power Dissipation@ TC = 25°C
Power Dissipation@ TC = 100°C
Collector-Emitter Voltage
Gate-to-Emitter Voltage
Operating Junction Temperature Range
Storage Temperature Range
Maximum Temperature of Solding
Max.
40
20
60
310
155
1350
± 30
-55 to +175
-55 to +175
260
Units
A
W
W
V
V
°C
°C
°C
©Silikron Semiconductor CO.,LTD.
2015.03.09
www.silikron.com
Version : 1.0
page 1 of 9
1 page  
Typical electrical and thermal characteristics
SSIG20N135H
Figure 9: Switching Time Vs Rg
Figure 10: Switching Loss Vs Rg
Figure11: Switching Loss Vs IC
Figure 12: Gate Charge Characteristics
©Silikron Semiconductor CO.,LTD.
2015.03.09
www.silikron.com
Version : 1.0
page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SSIG20N135H.PDF ] | |
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