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PDF MTN7002CKN3 Data sheet ( Hoja de datos )
| Número de pieza | MTN7002CKN3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTN7002CKN3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C087N3
Issued Date : 2016.12.30
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode MOSFET
MTN7002CKN3 BVDSS
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=700mA
RDS(ON)@VGS=4.5V, ID=500mA
60V
0.7A
0.27Ω(typ)
0.71Ω(typ)
Features
• ESD protected gate, ≥3kV
• High speed switching
• Pb-free lead plating and halogen-free package
• Easily designed drive circuits
• Low-voltage drive
• Easy to use in parallel
Symbol
MTN7002CKN3
D
G
G：Gate
S S：Source
D：Drain
Outline
SOT-23
D
S
G
Ordering Information
Device
MTN7002CKN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN7002CKN3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C087N3
Issued Date : 2016.12.30
Revised Date :
Page No. : 5/9
Capacitance vs Drain-to-Source Voltage
100
Ciss
C oss
10
Crss
Threshold Voltage vs Junction Tempearture
1.4
1.2 ID=1mA
1
0.8
ID=250μA
0.6
1
0 5 10 15 20 25 30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
1
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
0.1
6
0.01
0.001
0.001
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
ID, Drain Current(A)
1
Maximum Safe Operating Area
10
RDS(ON)
Limited
1
0.1
0.01 TA=25°C, Tj=150°, VGS=10V
RθJA=357°C/W, Single Pulse
100μs
1ms
10ms
100ms
DC
0.001
0.01
0.1 1
10 100
VDS, Drain-Source Voltage(V)
1000
4
2 VDS=30V
ID=0.2A
0
0 0.4 0.8 1.2 1.6 2
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 TA=25°C, VGS=10V, RθJA=357°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN7002CKN3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTN7002CKN3.PDF ] | |
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