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PDF MTE2D4N06E3 Data sheet ( Hoja de datos )
| Número de pieza | MTE2D4N06E3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTE2D4N06E3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C933E3
Issued Date : 2013.03.20
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE2D4N06E3 BVDSS
ID @VGS=10V
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
60V
120A
2.6mΩ
2.8mΩ
Features
• Simple Drive Requirement
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTE2D4N06E3
Outline
TO-220
G：Gate
D：Drain
S：Source
GDS
Ordering Information
Device
Package
MTE2D4N06E3-0-UB-S
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE2D4N06E3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C933E3
Issued Date : 2013.03.20
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
100000
Capacitance vs Drain-to-Source Voltage
NormalizedThreshold Voltage vs Junction Tempearture
1.4
10000
1.2
Ciss
1
ID=1mA
1000
C oss 0.8
ID=250μ A
Crss 0.6
100
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=5V
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
1000
100
10
Maximum Safe Operating Area
RDS(ON)
Limit
1μs
100μs
1ms
10ms
100ms
DC
1
TC=25°C, Tj=175°, VGS=10V
RθJC=0.45°C/W, Single Pulse
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=30V
8 ID=120A
6
4
2
0
0 20 40 60 80 100 120 140 160
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
250
200 silicon limit
150
100
package limit
50
VGS=10V, RθJC=0.45°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE2D4N06E3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTE2D4N06E3.PDF ] | |
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