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PDF BSS123BKN3 Data sheet ( Hoja de datos )
| Número de pieza | BSS123BKN3 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS123BKN3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode MOSFET
BSS123BKN3
BVDSS
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=100mA
RDS(ON)@VGS=4.5V, ID=100mA
100V
0.19A
2.8Ω(typ)
3.0Ω(typ)
Features
• ESD protected gate
• High speed switching
• Pb-free lead plating and halogen-free package
• Easily designed drive circuits
• Low-voltage drive
• Easy to use in parallel
Symbol
BSS123BKN3
D
G
G：Gate
S S：Source
D：Drain
Outline
SOT-23
D
S
G
Ordering Information
Device
BSS123BKN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
BSS123BKN3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
0.8
0.7 VDS=10V
0.6
0.5
0.4
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
45
40 TJ(MAX)=150°C
35
TA=25°C
RθJA=416°C/W
30
25
0.3 20
0.2 15
10
0.1 5
00
012 345
VGS, Gate-Source Voltage(V)
0.0001 0.001 0.01 0.1 1 10
Pulse Width(s)
100 1000
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=416°C/W
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
BSS123BKN3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSS123BKN3.PDF ] | |
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