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PDF RSD150N06FRA Data sheet ( Hoja de datos )
| Número de pieza | RSD150N06FRA | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
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4V Drive Nch MOSFET
RSD150N06FRA
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
Applications
Switching
Data Sheet
AEC-Q101 Qualified
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
CPT3
TL
2500
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
60
20
15
30
15
30
20
150
55 to +150
*1 Pw10s, Duty cycle1%
*2 Tc=25°C
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
∗1
(1) Gate
(2) Drain
(3) Source
∗2
1 ESD Protection Diode
2 Body Diode
(1) (2) (3)
Thermal resistance
Parameter
Channel to Case
* Tc=25C
Symbol
Rth (ch-c)*
Limits
6.25
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.02 - Rev.A
1 page  
RSD150N06FRA
Data Sheet
Fig.13 Typical Capacitance vs. Drain-Source Voltage
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
Coss
Crss
10
1
0.01
0.1 1 10
Drain-Source Voltage : VDS [V]
100
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Tc=25°C
Single Pulse
Rth(ch-c)=6.25°C/W
Rth(ch-c)(t)=r(t)×Rth(ch-c)
1
Fig.14 Maximum Safe Operating Area
100
Operation in this area is limited by RDS(on)
(VGS = 10V)
10
PW = 100μs
1
0.1
Tc=25°C
Single Pulse
0.01
0.1
1
10
Drain-Source Voltage : VDS [ V ]
PW = 1ms
PW = 10ms
DC Operation
100
0.1
0.01
0.0001 0.001
0.01 0.1
1
Pulse width : Pw(s)
10
100 1000
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.02 - Rev.A
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RSD150N06FRA.PDF ] | |
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