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Número de pieza | SJEP170R550 | |
Descripción | Normally-OFF Trench Silicon Carbide Power JFET | |
Fabricantes | SemiSouth | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SJEP170R550 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Silicon Carbide
SJEP170R550
Normally-OFF Trench Silicon Carbide Power JFET
Features:
- Compatible with Standard Gate Driver ICs
- Positive Temperature Coefficient for Ease of Paralleling
- Temperature Independent Switching Behavior
- 175 °C Maximum Operating Temperature
- RDS(on)max of 0.550 Ω
- Voltage Controlled
- Low Gate Charge
4
- Low Intrinsic Capacitance
Product Summary
BVDS
1700
V
RDS(ON)max
0.550
Ω
ETS,typ
74
µJ
D(2,4)
G(1)
Applications:
- Flyback Auxillary Power Supplies for:
- Solar inverters
- Motor Drives
- High Voltage SMPS
- High Voltage UPS
TO-247
3
2
1
S(3)
Internal Schematic
MAXIMUM RATINGS
Parameter
Symbol
Continuous Drain Current
Pulsed Drain Current (1)
Short Circuit Withstand Time
Power Dissipation
Gate-Source Voltage
ID, Tj=125
ID, Tj=175
IDM
tSC
PD
VGS
Operating and Storage Temperature
Tj, Tstg
Lead Temperature for Soldering
Tsold
(1) Pulse width limited by maximum junction temperature
(2) RgEXT = 1 Ω, tp < 200 ns, see Figure 6 for static conditions
Conditions
Tj = 125 °C
Tj = 175 °C
Tj = 25 °C
VDD < 800 V, TC < 125 °C
TC = 25 °C
AC(2)
1/8" from case < 10 s
Value
4
3
8
TBD
58
-15 to +15
-55 to +175
260
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, junction-to-case
Thermal Resistance, junction-to-ambient
Symbol
Rth JC
Rth JA
Value
Typ Max
- 2.6
- 50
SJEP170R550
Rev 3.0
Unit
A
A
µs
W
V
°C
°C
Unit
°C / W
1/7
1 page Silicon Carbide
SJEP170R550
Figure 13. Drain-Source Leakage
ID = f(VDS); VGS = 0 V; parameter: Tj
1.0E-04
1.0E-05
175oC
125oC
25oC
1.0E-06
1.0E-07
1.0E-08
0
600 1200 1800 2400
BVDS, Drain-Source Blocking Voltage (V)
Figure 14. Switching Energy Losses
Es = f(ID); VDS = 850 V; GD = +15 V, RGEXT = 20 Ω; TC = 25 oC
100
90
80 Ets
70
60
50 Eon
40
30 Eoff
20
10
0
012345
ID, Drain Current (A)
Figure 15. Inductive Load Switching Circuit
SJEP170R550
Rev 3.0
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SJEP170R550.PDF ] |
Número de pieza | Descripción | Fabricantes |
SJEP170R550 | Normally-OFF Trench Silicon Carbide Power JFET | SemiSouth |
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