(PDF) PK664BA Datasheet - N-Channel Field Effect Transistor

Número de pieza	PK664BA
Descripción	N-Channel Field Effect Transistor
Fabricantes	NIKO-SEM
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No Preview Available ! NIKO-SEM N-ChFanienldelEEfnfehcatnTcreamnseinsttoMrodeHalogen-FrePe &KPDL6eF6aNd4-5BFxr6eAPe PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 2.4mΩ ID 114A D G S D D DD #1 S S S G G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C Continuous Drain Current Avalanche Current TA = 25 °C TA = 70 °C Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM ID IAS EAS PD PD Tj, Tstg LIMITS 30 ±20 114 72 250 23 18 48 115 59 23 2.4 1.5 -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 Junction-to-Case RJA RJC 51 °C / W 2.1 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air 3ePnavcikroangme elimntitwaittihonTcAu=r2re5n°Ct i.s 51A. REV 1.1 1 G-25-5 1 page

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PDF PK664BA Data sheet ( Hoja de datos )