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PDF SST12LP19E Data sheet ( Hoja de datos )

Número de pieza SST12LP19E
Descripción High-Efficiency Power Amplifier
Fabricantes Microchip 
Logotipo Microchip Logotipo



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No Preview Available ! SST12LP19E Hoja de datos, Descripción, Manual

2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E
Data Sheet
SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. SST12LP19E is a 2.4 GHz fully-integrated, high-power,
high-gain Power Amplifier module designed in compliance with IEEE 802.11b/g/n
and 256 QAM applications. For WLAN applications, it typically provides 25 dB gain
with 34% power-added efficiency. SST12LP19E has excellent linearity while meet-
ing 802.11g spectrum mask at 23.5 dBm and 802.11b spectrum mask at 23 dBm.
This power amplifier includes a power detector with dB-wise linear voltage output
and features easy board-level usage along with high-speed power-up/down control
through a single combined reference voltage pin. SST12LP19E and is offered in 6-
contact XSON, 8-contact XSON, and 6-contact X2SON packages. Due to its small
package size and high efficiency, this power amplifier is also well suited for ZigBee®
and Bluetooth® applications.
Features
• Excellent RF Stability with Moderate Gain:
– Typically 25 dB gain across 2.4 – 2.5 GHz
• High linear output power:
– >26 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 6
– Meets 802.11g OFDM ACPR requirement up to 23.5
dBm
– 3% EVM up to 18 dBm (high-efficiency configuration) or
~3% EVM up to 19.5 dBm (high-power configuration) for
54 Mbps 802.11g signal
– 2.5% EVM up to 16.5 dBm for MCS7–20 MHz band-
width
– 1.8% EVM up to 16 dBm for MCS9–40 MHz bandwidth
– Meets 802.11b ACPR requirement up to 23 dBm
• High power-added efficiency/Low operating cur-
rent for 802.11b/g/n applications
– ~34%/200 mA @ POUT = 23.5 dBm for 802.11g
– ~31%/195 mA @ POUT = 23 dBm for 802.11b
• Single-pin low IREF power-up/down control
– IREF <2 mA
• Low idle current
– ~40-65 mA ICQ, depending on package type and config-
uration.
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• Low Shut-down Current (~2 µA)
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Excellent On-chip power detection
– 20 dB dynamic range on-chip power detection
– dB-wise linear output voltage
– Temperature stable and load insensitive
• Simple input/output matching
• Packages available
– 8-contact XSON – 2mm x 2mm x 0.5 mm max
– 6-contact XSON – 1.5mm x 1.5mm x 0.5 mm max
– 6-contact X2SON – 1.5mm x 1.5mm x 0.4mm max
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n/256 QAM)
• Bluetooth
• ZigBee
• Cordless phones
• 2.4 GHz ISM wireless equipment
© 2014
www.microchip.com
DS70005041D
08/14

1 page




SST12LP19E pdf
2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E
Pin Descriptions
Data Sheet
Table 1: Pin Description, 8-contact XSON (QX8)
Symbol
Pin No. Pin Name
Type1 Function
GND
VCC1
RFIN
VCCb
VREF
0 Ground
1 Power Supply
2
3 Power Supply
4
PWR
I
PWR
PWR
Low inductance ground pad
Power supply, 1st stage
RF input, DC decoupled
Supply voltage for bias circuit
1st and 2nd stage idle current control
Det 5
O On-chip power detector
RFOUT
6
O RF output
RFOUT
VCC2
7
8 Power Supply
O
PWR
RF output
Power supply, 2nd stage
1. I=Input, O=Output
Table 2: Pin Description, 6-contact XSON (QX6) and 6-contact X2SON(NR)
Symbol
Pin No. Pin Name
Type1 Function
GND
VCC1
RFIN
VCCb
VREF
0 Ground
1 Power Supply
2
3 Power Supply
4
PWR
I
PWR
PWR
Low inductance ground pad
Power supply, 1st stage
RF input, DC decoupled
Supply voltage for bias circuit
1st and 2nd stage idle current control
Det 5
VCC2/ RFOUT 6 Power Supply
O On-chip power detector
PWR/O Power supply, 2nd stage/ RF Output
1. I=Input, O=Output
T1.0 75041
T2.0 75041
© 2014
DS70005041D
08/14
5

5 Page





SST12LP19E arduino
2.4 GHz High-Gain, High-Efficiency Power Amplifier
SST12LP19E
Data Sheet
Supply Current versus Output Power
240
230
220 Freq=2.412 GHz
210
200
Freq=2.442 GHz
190 Freq=2.472 GHz
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
1423 F7.0
Figure 7: Total Current Consumption for 802.11g Operation versus Output Power
PAE versus Output Power
40
38
36
Freq=2.412 GHz
34 Freq=2.442 GHz
32
30
Freq=2.472 GHz
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
1423 F8.0
Figure 8: PAE versus Output Power
© 2014
DS70005041D
08/14
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