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PDF TLE5309D Data sheet ( Hoja de datos )
| Número de pieza | TLE5309D | |
| Descripción | Dual GMR/AMR Angle Sensor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TLE5309D (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
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Angle Sensor
Dual GMR/AMR Angle Sensor
TLE5309D
Data Sheet
V 1.0, 2016-01
Sense & Control
1 page  
TLE5309D
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2011-02-24
Data Sheet
5 V 1.0, 2016-01
5 Page 
2 Functional Description
TLE5309D
Functional Description
2.1 General
The TLE5309D comprises one GMR-based angle sensor IC mounted on the top and one AMR-based angle
sensor IC mounted on the bottom of a package leadframe in a flipped configuration, so the positions of the
sensitive elements in the package-plane coincide. This mounting technique ensures a minimum deviation of the
magnetic field orientation sensed by the two chips.
The Magneto Resistive (MR) sensors are implemented using vertical integration. This means that the MR sensitive
areas are integrated above the analog portion of the ICs. These MR elements change their resistance depending
on the direction of the magnetic field.
On each sensor, four individual MR elements are connected in a Wheatstone bridge arrangement. Each MR
element senses one of two components of the applied magnetic field:
• X component, Vx (cosine) or the
• Y component, Vy (sine)
The advantage of a full-bridge structure is that the amplitude of the MR signal is doubled and temperature effects
cancel out.
GMR Sensor
The output signal of a GMR bridge is unambiguous in a range of 180°. Therefore two bridges are oriented
orthogonally to each other to measure 360°.
GMR Resistors
S 0°
VX
VY
N
ADCX+ ADCX-
GND
ADCY+ ADCY-
90°
VDD
Figure 2 Sensitive bridges of the GMR sensor (top die)
Note: In Figure 2, the arrows in the resistors symbolize the direction of the reference layer. Size of the sensitive
areas is greatly exagerated for better visualisation.
Data Sheet
11 V 1.0, 2016-01
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet TLE5309D.PDF ] | |
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