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Número de pieza | SNN5010D | |
Descripción | Advanced N-Ch Power MOSFET | |
Fabricantes | KODENSHI KOREA | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SNN5010D (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! SNN5010D
Advanced N-Ch Power MOSFET
DC/DC CONVERTER APPLICATIONS
Features
• High Voltage : BVDSS=100V(Min.)
• Low Crss : Crss=130pF(Typ.)
• Low gate charge : Qg=75nC(Typ.)
• Low RDS(ON) : RDS(ON)=26mΩ(Max.)
Ordering Information
Type No.
SNN5010D
Marking
SNN5010
Package Code
TO-252
PIN Connection
GS
D
G
TO-252
D
S
Marking Diagram
SNN
5010
YWW
Column 1,2 : Device Code
Column 3 : Production Information
e.g.) YWW
-. YWW : Date Code (year, week)
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
VDSS
VGSS
ID
(TC=25℃)
(TC=100℃)
IDM
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
②
②
①
①
PD
IAS
EAS
IAR
EAR
TJ
Tstg
* Limited by maximum junction temperature
Rating
100
±20
50
31
150
65
25
173
50
6.5
150
-55~150
Characteristic
Thermal
resistance*
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max.
1.92
62.5
KSD-T6O016-001
Unit
V
V
A
A
W
A
mJ
A
mJ
°C
Unit
℃/W
1
1 page Fig. 11 Gate Charge Test Circuit & Waveform
SNN5010D
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T6O016-001
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SNN5010D.PDF ] |
Número de pieza | Descripción | Fabricantes |
SNN5010D | Advanced N-Ch Power MOSFET | KODENSHI KOREA |
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