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Número de pieza | TMM24512P | |
Descripción | ONE TIME PROGRAMMABLE READ ONLY MEMORY | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TMM24512P (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! TOSHIBA MOS MEMORY PRODUCT
TMM24512P/F
TMM24512P/F 65,536 WORD x 8 BIT ONE TIME
PROGRAMMABLE READ ONLY MEMORY
IOESCR! PTIONI
The TMM245l2P/F is a 65,536 word )( 8 bit one time programmable read only memory,
and molded in a 28 pin plastic package. The TMM245l2P/F's access time is 2S0ns, and
has low power standby mode which reduces the power dissipation without increasing
access time. The electrical characteristics and programming method are the same as
U.V. EPROM TMM275l2D's. Once programed, the TMM245l2P/F can not be erased because of
using plastic DIP without transparent window.
IFEATURESI
• Fast access time: 2S0ns
• Low power dissipation
Active : l20mA
Standby: 3SmA
Single SV power supply
• Full static operation
• High speed programming mode
• Inputs and outputs TTL compatible
·,Pin compatible with TMM275l2D
• Standard 28 pin DIP plastic package: TMM245l2P
• Plastic Flat Package
TMM24Sl2F
\PIN CONNECTIONI (TOP VIEW)
\BLOCK DIAGRAM I Vpp OND vee
A5
AO
00
01
02
OND
\PIN NAf.1ESI
~o "'Al5 Address Inputs
00"'07 Outputs (Inputs)
~ Chip Enable Input
O'E/Vpp
OEnuabtlePu~Program
In ut
Supply
p Voltage
Vee
Power Supply
Voltage (+5V)
GND Ground
IMOOE SELECTION\
~ cr:
MODE
1/20)
Read L
Output Deselect *
Standby
H
Program
L
Program Inhibit H
Program Verify L
~/vpp Vee
00 "'07
(22) (28) (11",13,lS"'19)
L Data Out
H 5V High Impedance
* High Impedance
Vpp Data In
Vpp 6V High Impedance
L Data Out
POWER
Active
Standby
Active
'" H or L
- E-49 -
1 page TIMING WAVEFORMS (PROGRAM)
(VCC·6V±O.25V, Vpp.12.5V±O.5V)
TMM24512P/F
OE';/Vpp
00-07
Vee
tves
tDV
PROGRAM
PROGRAM VERIFY
Note 1. VCC must be applied simultaneously or before Vpp and cut off
simultaneously or after Vpp.
2. Removing the device from socket and setting the device in socket
with Vpp-12.5V may cause permanent damage to the device.
3. The Vpp supply voltage is permitted up to l4V for program operation.
So the voltage over l4V should not be applied to the Vpp terminal.
When the switching pulse voltage is applied to the Vpp terminal.
the overshoot voltage of its pulse should not be exceeded l4V.
- E-53 -
5 Page OUTLINE DRAWINGS (TMM245l2F)
28
l~
TMM24512P/F
Unit in mm
Note: Lead pitch is 1.27 and tolerance is ±O.12 against theoretical center
of each lead that is obtained on the basis of No.1 and No.2S leads.
- E-59 -
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet TMM24512P.PDF ] |
Número de pieza | Descripción | Fabricantes |
TMM24512F | ONE TIME PROGRAMMABLE READ ONLY MEMORY | Toshiba |
TMM24512P | ONE TIME PROGRAMMABLE READ ONLY MEMORY | Toshiba |
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