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Número de pieza | TMM24256AF | |
Descripción | ONE TIME PROGRAMMABLE READ ONLY MEMORY | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TMM24256AF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! TOSHIBA MOS MEMORY PRODUCT
TMM24256AP / AF 32,763 WORD X 8 BIT
TM M24256AP / AFONE TIME PROGRAMMABLE READ ONLY MEMORY
SILICON STACKED GATE MOS
DESCRIPTION
The TMM24256AP/AF is a 32,768 word x 8 bit
one time programmable read only memory, and
molded in a 28 pin plastic Package.
The TMM24256AP/AF's access time is 200ns
and has low power standby mode which reduces the
power dissipation without increasing access time.
FEATURES
• Fast access time: 200ns
• Low power dissipation
Active : 100mA
Standby: 30mA
• Single 5V power supply
• Full static operation
• High speed programming mode
PIN CONNECTION
The electrical characteristics and programming
method are the same as U. V. EPROM
TMM27256AD's.
Once programed, the TMM24128AP/AF can not
be erased because of using plastic DIP without
transparent window.
.Inputs and outputs TIL compatible
• Pin compatible with ROM TC53257P,
TMM23256P, EPROM TMM27256D/AD and
TC57256D
• Standard28 pin DIP plastic package: TMM24256AP
• Plastic Flat Package
TMM24256AF
BLOCK DIAGRAM
Vpp
A12
A5
Al
AO
00
01
02
GND
Vcc
A14
A13
AS
A9
All
OE
A10
CE
07
06
05
04
03
PIN NAMES
Ao-Au
0 0 -07
CE
OE
Vpp
Vee
GND
Address Inputs
Outputs (Inputs)
Chip Enable Input
Output Enable Input
Program Supply Voltage
Vee Supply Voltage (+ 5V)
Ground
AD
Al
A2
A3
A4
A5
A6
A7
AS
A9
AlD
All
Al2
A13
Al4
MODE SELECTION
~MODE
CE
(20)
Read
L
Output
Deselect
*
Standby
H
Program
L
Program
Inhibit
H
Program
Verify
* H or L
*
OE Vpp Vee
(22) (1) (28)
L
H 5V 5V
*
H
H 12.5\ 6V
L
0 0-07
(11-13,15-19)
Data Out
High Impedance
High Impedance
Data In
High Impedance
Data Out
POWER
Active
Standby
Active
- E-27 -
1 page TIMING WAVEFORMS(PROGRAM)
(VCC=6V±O.25V, Vpp=12.5V±O.5V)
TMM24256API AF
AO-14
00-07
x: ~K=
~~
I
-tAH
I
r\ topw
L n~
teEH
tOES
~'AXX(XXXXX x~xxX~~
tDFP
\~
tDS tDH tOE
7
\ .D-IN
STABLE
-~
-,~
7'-
~...
DOUT VALID
~-
VPP
tvps
I
Vee
tves
I
PROGRAM
PROGRAM VERIFY
Note: 1. Vec must be applied simultaneously or before Vpp and cut off simultaneously or after VPP.
2. Removing the device from socket and setting the device in socket with Vpp= 12. 5V may cause permanent
damage to the device.
3. The Vpp supply voltage is permitted up to 14V for program operation. so the voltage over 14V should not be
applied to the Vpp terminal.
When the switching pulse voltage is applied to the Vpp terminal. the overshoot voltage of its pulse should not
be exceeded 14V.
.
- E-31 -
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet TMM24256AF.PDF ] |
Número de pieza | Descripción | Fabricantes |
TMM24256AF | ONE TIME PROGRAMMABLE READ ONLY MEMORY | Toshiba |
TMM24256AP | ONE TIME PROGRAMMABLE READ ONLY MEMORY | Toshiba |
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