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PDF TMM24128AP Data sheet ( Hoja de datos )
| Número de pieza | TMM24128AP | |
| Descripción | ONE TIME PROGRAMMABLE READ ONLY MEMORY | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TOSHIBA MOS MEMORY PRODUCT
TMM24128AP / AF 16,384 WORD X 8 BIT
TM M24128AP / AFONE TIME PROGRAMMABLE READ ONLY MEMORY
N CHANNEL SILICON STACKED GATE MOS
DESCRIPTION
TheTMM24128AP/AF isa 16,384word X 8 bit
one time programmable read only memory, and
molded in a 28 pin plastic DIP. TMM24128AP/AF's
access time is 200ns, and has low power standby
mode which reduces the power dissipation without
increasing access time. The electrical characteristics
and programming method are the same as U. V.
EPROM TMM27128AD's. Once programed, the
TMM24128AP/AF can not be erased because of
using plastic DIP without transparent window.
FEATURES
• Single 5 volt power supply
• Fast access time : 200ns(Max.)
• Power dissipation: 100mA(active current) Max.
30mA(standby current) Max.
• Low power standby mode: CE
• Output buffer control
: OE
• Full static operation
• High speed programming mode
• Single location programming
• Three state outputs
.Inputs and outputs TIL compatible
.Compatible with TMM27128AD and MASK ROM
TMM23128P
.28 PIN standard plastic package: TMM24128AP
.28 PIN flat package
TMM24128AF
PIN CONNECTION
VI'P
A12
A7
A6
A5
1
AO
00
01
02
Vee
PGM
A13
AS
A9
All
OR
AIO
eE
07
06
05
04
03
PIN NAMES
Ao-AI3
0 0 -07
CE
OE
PGM
Vpp
Vee
GND
Address Inputs
Outputs (Inputs)
Chip Enable Input
Output Enable Input
Program Control Input
Program Supply Voltage
Vee Supply Voltage (+ 5V)
Ground
BLOCK DIAGRAM
00 01020304, 05 06 07
AO
Al
A2
A3
A4,
A5
A6
A7
AS
A9
A10
All
Al2
A13
MODE SELECTION
~MOD
PGM CE DE Vpp Vee
0 0-07
(27) (20) (22) (1) (28) (11-13.15-19)
Read
HL L
Data Out
Output
* *Deselect
H 5V 5V High Impedance
Standby
Program
Program
Inhibit
*H*
High Impedance
*L L
Data In
* *H High Impedance
12.5V 6V
HL H
High Impedance
Program
Venfy
* H or L
HL L
Data Out
POWER
Active
Standby
Active
- E-17 -
1 page  
TIMING WAVEFORMS (HIGH SPEED PROGMAM)
1MM24128APIAF
t
DIN STABLE
Vpp
tvs
PROGRAM
PROGRAM
VERIFY
PROGRAM
INITIAL PROGRAM
ADDITIONAL PROGRAM
Note: 1. Vee must be applied simultaneously or before Vpp and cut off simultaneously or after VPP.
2. Removing the device from socket and setting the device in socket with Vpp= 12. 5V may cause permanent
damage to the device.
3. The Vpp supply voltage is permitted up to 14V for program operation, so the voltage over 14V should not be
applied to the Vpp terminal.
.
When the switching pulse voltage is applied to the Vpp terminal, the overshoot voltage of its pulse should not
be exceeded 14V.
- E-21 -
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet TMM24128AP.PDF ] | |
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