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Número de pieza | TMM27512DI | |
Descripción | N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TMM27512DI (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! TOSHIBA MOS MEMORY PRODUCT
65,536 WORD X 8 BIT N-MOS UV ERASABLE AND EL-
ECTRICALLY PROGRAMMABLE READ ONLY MEMORY
PRELIMINARY
TMM27512DI~20
TMM27512DI-25
DESCRIPTION
The TMM27512DI is a 65,536 word X 8 bit ultraviolet
light erasable and electrically programmable read only
memory.
For read operation, the TMM27512DI's access time is
200ns/250ns. The TMM27512DI operates from a single 5-
volt power supply and has a low power standby mode which
reduces power dissipation without increasing access time.
The standby mode is achieved by applying a TIL-high level
signal to the CE input.
For program operation, the programming is achieved by
using the high speed prgramming mode. TMM27512DI is
fabricated with N-channel silicon double layer gate MOS
technology.
FEATURES
Vee
tAec
lee2
leel
-15
150ns
I
5V±5%
I
120mA
35mA
-20
200ns
• Wide operating temparature range -40-85°C
• Full static operation
• High speed programming mode
• Inputs and outputs TIL compatible
• Pin compatible with i27512
• Standard 28 pin DIP cerdip package
PIN CONNECTION (TOP VIEW)
A15
A12
A7
A6
A5
A4
A3
A2
Al
AO
00
01
02
GND
vcc
A14
A13
AS
A9
All
OE;/Vpp
A10
CE
07
06
05
04
03
PIN NAMES
~-A15
0 0-07
CE
OE/Vpp
Vee
GND
Address Inputs
Outputs (Inputs)
OUIPUIIChip Enable Input
Program
Enable
Supply
Input
Voltage
Power Supply Voltage (+5V)
Ground
BLOCK DIAGRAM
Vpp OND Vec
00 01 02 03 04 05 06 07
CE
AO
Al
A2
A3
A4
A5
A6
A7
AS
A~
AIO
All
A12
A13
A14
A15
MODE SELECTION
ARRAY
65,536 X Sbi ts
~MODE
.
CE
(20)
OEI
Vpp
(22)
Vee
(28)
0 0-07
(11-13.15-19)
POWER
Read
Output Deselect
Standby
Program
Program Inhibit
LL
Data Out
Active
* H 5V High Impedance
H*
High Impedance Standby
L Vpp
Data In
H Vpp 6V High Impedance Active
Program Verify
* H or L
LL
Data Out
- 0-93 -
1 page TIMING WAVEFORMS (PROGRAM)
(VCC=6V±O.25V, Vpp=12.5V±O.5V)
TMM27512DI-20
TMM27512DI-25
AO -A15
OE/Vpp
00 -07
x
~ I t~
I tVR
1\~V
tpRT
tOES
~
V\
tDS tDH
) DIN STABLE 1\
'\ It
tDV
,)
>C
tAR
/
~
DOUT VALID
r\
V
tves
Vee r
PROGRAM
PROGRAM VERIFY
Note: 1. Vee must be applied simultaneously or before Vpp and cut off simultaneously or after VPP.
2. Removing the device from socket and setting the device in socket with Vpp= 12. 5V may cause permanent
damage to the device.
3. The Vpp supply voltage is permitted up to 14V for program operation. So the voltage over 14V should be
aplied to the Vpp terminal. When the switching pulse voltage is applied to the Vpp terminal, the overshoot
voltage of its pulse should not be exceeded 14V.
- 0-97 -
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet TMM27512DI.PDF ] |
Número de pieza | Descripción | Fabricantes |
TMM27512D | N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY | Toshiba |
TMM27512D-20 | N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY | Toshiba |
TMM27512D-200 | N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY | Toshiba |
TMM27512D-25 | N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY | Toshiba |
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