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PDF TMM27512D Data sheet ( Hoja de datos )
| Número de pieza | TMM27512D | |
| Descripción | N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TMM27512D (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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TOSHIBA MOS MEMORY PRODUCT
65,536 WORD X 8 BIT N-MOS UV ERASABLE AND EL- TMM27512D-20,TMM27512D-200
ECTRICALLY PROGRAMMABLE READ ONLY MEMORY
PRELIMINARY
TMM27512D-25,TMM27512D-250
DESCRIPTION
The TMM27512D is a 65,536 word X 8 bit ultraviolet
light erasable and electrically programmable read memory.
For read operation, the TMM27512D's access time is
200ns/250ns. The TMM27512D operates from a single 5-
volt power supply and has a low power standby mode which
FEATURES
-200
-250 I
!5V±10%
~~----~-------r------~-2-0-0--ns I 250ns I
35mA
130mA
40mA
reduces power dissipation without increasing access time.
The standby mode is achieved by applying a TTL-high level
signal to the CE input. For program operation, the pro-
gramming is achieved by using the high speed prgramming
mode. The TMM27512D is fabricated with N-channel
silicon double layer gate MOS technology.
• Full static operation
• High speed programming mode
• Inputs and outputs TTL compatible
• Pin compatible with i27512
• Standard 28 pin DIP cerdip package
PIN CONNECTION (TOP VIEW)
A15
A12
A7
A6
A5
A4
A3
A2
Al
AO
00
01
02
GND
vcc
A14
A13
AS
A9
All
OEVVpp
AIO
CE
07
06
05
04
03
PIN NAMES
Ao- A 15
0 0 -07
CE
OE/Vpp
Vee
GND
Address Inputs
Outputs (Inputs)
Chip Enable Input
Outpyprogram
Enable
Supply
Input
Voltage
Power Supply Voltage (+ 5V)
Ground
BLOCK DIAGRAM
Vpp GND Vee
00 01 (;2 CJ3 04 05 06 ()7
AO
Al
A2
A3
A4
A5
A6
A7
A8
A9
AIO
All
A12
A13
A14
A15
MODE SELECTION
ARRAY
60,536 x 8ni to
~;:MODE
--
CE
(20)
OE/
Vpp
(22)
Vee
(28)
0 0 -07
(11-13,15-19)
POWER
Read
Output Deselect
Standby
Program
Program Inhibit
LL
Data Out
Active
* H 5V High Impedance
H*
High Impedance Standby
L Vpp
Data In
H Vpp 6V High Impedance Active
Program Verify
* H or L
LL
Data Out
- 0-83 -
1 page  
TIMING WAVEFORMS (PROGRAM)
(VCC=6V±O.25V, Vpp=12.5V±O.5V)
TMM27512D-20, TMM27512D-200
TMM27512D-25, TMM27512D-250
AO -A15
OE/Vpp
00 -07
x
~~
I tVR
'" VtpRT
tOES
~
~
/\
tDS tDH tDV
/ DIN STABLE \.
\/
J
\
K=
tAH
/
tDF
I--
DOUT VALID
1\
V
tves
Vee I
PROGRAM
PROGRAM VERIFY
Note: (1) Vee must be applied simultaneously with or before Vpp and cut off simultaneously with or after Vpp.
(2) Removing the device from the socket and setting the device in the socket with Vpp=12.5V may cause permanent
damage to the device.
(3) The Vpp supply voltage is permitted up to 14V for program operation; Voltages over 14V should be
applied to the Vpp terminal. When the switching pulse voltage is applied to the Vpp terminal, the overshoot
voltage of its pulse should not exceed 14V.
- 0-87 -
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet TMM27512D.PDF ] | |
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