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PDF SUN04A65IS Data sheet ( Hoja de datos )
| Número de pieza | SUN04A65IS | |
| Descripción | New Generation N-Ch Power MOSFET | |
| Fabricantes | AUK | |
| Logotipo |  |
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SUN04A65IS
New Generation N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: RDS(on)=2.4Ω (Typ.)
Low gate charge: Qg=12nC (Typ.)
Low reverse transfer capacitance: Crss=6pF (Typ.)
Lower EMI noise
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SUN04A65IS
SUN04A65
I-PAK
(Short Lead)
GDS
I-PAK (Short Lead)
Marking Information
SUN
04A65
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25C
Tc=100C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rev. date: 11-SEP-14
KSD-T6Q025-000
Rating
650
30
4
2.53
16
86.7
4
5.2
52
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
www.auk.co.kr
1 of 8
1 page  
Fig. 12 Gate Charge Test Circuit & Waveform
SUN04A65IS
Fig. 13 Resistive Switching Test Circuit & Waveform
Fig. 14 EAS Test Circuit & Waveform
Rev. date: 11-SEP-14
KSD-T6Q025-000
www.auk.co.kr
5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SUN04A65IS.PDF ] | |
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