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PDF FDMS3669S Data sheet ( Hoja de datos )
| Número de pieza | FDMS3669S | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMS3669S
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel
Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
RoHS Compliant
January 2013
General Description
This device includes two specialized N-Channel MOSFETs in a
dual PQFN package. The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
Pin 1
Pin 1
G1
D1
D1
D1
D1
PHASE
(S1/D2)
G2
S2
S2
S2
Top Power 56 Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
S2 5
S2 6
S2 7
G2 8
Q2 4 D1
PHASE
3 D1
2 D1
Q1 1 G1
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
(Note 6)
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
±20 ±12
24 60
43
131a
75
181b
50
614
2.21a
1.01c
60
485
2.51b
1.01d
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
5.0
501b
1201d
2.8
°C/W
Device Marking
9ACF
21CD
Device
FDMS3669S
©2013 Fairchild Semiconductor Corporation
FDMS3669S Rev.C1
Package
Power 56
1
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
1 page  
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
10
ID = 13 A
8
VDD = 10 V
6
VDD =15 V
VDD = 20 V
4
2000
1000
100
Ciss
Coss
2
0
0 3 6 9 12 15 18
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
f = 1 MHz
VGS = 0 V
Crss
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. Capacitance vsDrain
to Source Voltage
25
20
TJ = 25 oC
15
TJ = 125 oC
10
TJ = 100 oC
5
1
0.01
0.1 1
tAV, TIME IN AVALANCHE (ms)
10
Figure9. UnclampedInductive
Switching Capability
40
100
100 μs
10
1 THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.01
0.01
0.1
1
1 ms
10 ms
100 ms
1s
10 s
DC
10 100200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
50
40
30
VGS = 4.5 V
20
VGS = 10 V
10
0
25
Limited by Package
RθJC = 5.0 oC/W
50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
100
SINGLE PULSE
RθJA = 125 oC/W
10
1
0.110-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2013 Fairchild Semiconductor Corporation
FDMS3669S Rev.C1
5
www.fairchildsemi.com
5 Page 
Application Information
1. Switch Node Ringing Suppression
Fairchild’s Power Stage products incorporate a proprietary design* that minimizes the peak overshoot, ringing voltage on the switch
node (PHASE) without the need of any external snubbing components in a buck converter. As shown in the figure 29, the Power Stage
solution rings significantly less than competitor solutions under the same set of test conditions.
Power Stage Device
Competitors solution
Figure 29. Power Stage phase node rising edge, High Side Turn on
*Patent Pending
©2013 Fairchild Semiconductor Corporation
FDMS3669S Rev.C1
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet FDMS3669S.PDF ] | |
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