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Número de pieza | MYXD30650-10CEN | |
Descripción | SiC Schottky 3 Phase Diode Bridge | |
Fabricantes | Micross | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MYXD30650-10CEN (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! SiC Schottky 3 Phase Diode Bridge
650 Volt 10 Amp Hermetic
MYXD30650-10CEN
Product OverviewFeatures
ary• High voltage 650V isolation
• 6 off high current 10A diodes
• High temperature 210°C
in• BeO free and RoHS compliant
• HMP solder tinned leads available
• Electrically isolated flange
relim• Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
performance
• No reverse recovery time
P• Screening options available
Benefits
• Essentially no switching losses
• Higher efficiency
• Reduction of heat sink requirements
Applications
• Harsh environment rectification
• Harsh environment regulators
ºº Commercial high temperature
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Other packaging options available
Absolute Maximum Ratings (Per Diode)*
Symbols
VR
VRRM
IF(MAX)
IFSM
PD
TJ
Tstg
Parameters
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Average Forward Current
Surge Peak Forward Current (8.3ms, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range
Storage Temperature Range
Figure 1: TO-258 5 PIN
Case
NC
Pin 1 Pin 2 Pin 3 Pin 4 Pin 5
- ~ ~~+
Figure 2: Circuit Diagram
Values
650
650
10
60
28
-55 to +210
-55 to +210
Units
Volts
Volts
Amps
Amps
Watts
oC
oC
Thermal Properties
Symbols
RθJC
Parameters
Thermal Resistance, Junction To Case
Values
1.1
Units
oC / Watt
April 2014 Rev 1.0
1
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MYXD30650-10CEN.PDF ] |
Número de pieza | Descripción | Fabricantes |
MYXD30650-10CEN | SiC Schottky 3 Phase Diode Bridge | Micross |
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