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PDF STGYA120M65DF2 Data sheet ( Hoja de datos )
| Número de pieza | STGYA120M65DF2 | |
| Descripción | Trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STGYA120M65DF2
Trench gate field-stop IGBT, M series 650 V, 120 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.65 V (typ.) @ IC = 120 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGYA120M65DF2
Table 1: Device summary
Marking
Package
G120M65DF2
Max247 long leads
Packing
Tube
August 2016
DocID029193 Rev 4
This is information on a product in full production.
1/16
www.st.com
1 page  
STGYA120M65DF2
Symbol
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
td(on) Turn-on delay time
66 - ns
tr Current rise time
38 - ns
(di/dt)on
td(off)
tf
Eon(1)
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching energy
VCE = 400 V, IC = 120 A,
VGE = 15 V, RG = 4.7 Ω
(see Figure 29: " Test circuit
for inductive load switching" )
2500 - A/µs
185 -
ns
85 - ns
1.8 - mJ
Eoff(2) Turn-off switching energy
4.41 - mJ
Ets Total switching energy
6.21 - mJ
td(on) Turn-on delay time
62 - ns
tr Current rise time
48 - ns
(di/dt)on
td(off)
tf
Eon(1)
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching energy
VCE = 400 V, IC = 120 A,
VGE = 15 V, RG = 4.7 Ω
TJ = 175 °C (see Figure 29: "
Test circuit for inductive load
switching" )
2016 - A/µs
187 -
ns
164 -
ns
4.4 - mJ
Eoff(2) Turn-off switching energy
6.0 - mJ
Ets Total switching energy
VCC ≤ 400 V, VGE = 13 V,
TJstart = 150 °C
tsc
Short-circuit withstand time
VCC ≤ 400 V, VGE = 15 V,
TJstart = 150 °C
10.4
10
-
-
6-
mJ
µs
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
Symbol
Table 7: Diode switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
trr
Qrr
Irrm
dIrr/dt
Err
trr
Qrr
Irrm
dIrr/dt
Err
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
IF = 120 A, VR = 400 V,
VGE = 15 V (see Figure 29: "
Test circuit for inductive load
switching") di/dt = 1000 A/µs
IF = 120 A, VR = 400 V,
VGE = 15 V TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching")
di/dt = 1000 A/µs
- 202 -
- 2.9 -
- 32.5 -
ns
µC
A
- 500 - A/µs
- 500 -
- 320 -
- 11.2 -
- 62 -
µJ
ns
µC
A
- 270 - A/µs
- 1710 -
µJ
DocID029193 Rev 4
5/16
5 Page 
STGYA120M65DF2
3 Test circuits
Figure 29: Test circuit for inductive load
switching
AA
C
G
L=100 µH
EB
B
C
G D.U.T
3.3
µF
+ RG
E
-
1000
µF
VCC
AM01504v 1
Test circuits
Figure 30: Gate charge test circuit
VCC
12 V
47 kΩ
100 nF
1 kΩ
Vi
≤
V
GMAX
2200
µF
PW 1 kΩ
IG=CONST
2.7 kΩ
47 kΩ
100 Ω
D.U.T.
VG
AM01505v1
Figure 31: Switching waveform
Figure 32: Diode reverse recovery waveform
DocID029193 Rev 4
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STGYA120M65DF2.PDF ] | |
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